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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SR009 R1GDIODE SCHOTTKY 90V 500MA DO204AL Taiwan Semiconductor Corporation |
2,691 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 65pF @ 4V, 1MHz | - | 100 µA @ 90 V | 90 V | 500mA | -55°C ~ 150°C | 850 mV @ 500 mA | |
|
HT12G R0GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
3,136 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
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|
SFS1601GHMNGDIODE GEN PURP 50V 16A TO263AB Taiwan Semiconductor Corporation |
2,626 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 16A | -55°C ~ 150°C | 975 mV @ 8 A |
|
ES1CLHM2GDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
3,675 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
SR009HR1GDIODE SCHOTTKY 90V 500MA DO204AL Taiwan Semiconductor Corporation |
3,443 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 65pF @ 4V, 1MHz | - | 100 µA @ 90 V | 90 V | 500mA | -55°C ~ 150°C | 850 mV @ 500 mA |
|
|
HT13G R0GDIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation |
2,189 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
SFS1602G MNGDIODE GEN PURP 100V 16A TO263AB Taiwan Semiconductor Corporation |
2,522 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 16A | -55°C ~ 150°C | 975 mV @ 8 A | |
|
|
ES1CLHMHGDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
2,218 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
SR010 R1GDIODE SCHOTTKY 100V 500MA DO204 Taiwan Semiconductor Corporation |
2,819 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 65pF @ 4V, 1MHz | - | 100 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 850 mV @ 500 mA | |
|
SF21G R0GDIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation |
3,442 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
SFS1602GHMNGDIODE GEN PURP 100V 16A TO263AB Taiwan Semiconductor Corporation |
3,439 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 16A | -55°C ~ 150°C | 975 mV @ 8 A |
|
|
ES1DL MHGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
2,365 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
SR010HR1GDIODE SCHOTTKY 100V 500MA DO204 Taiwan Semiconductor Corporation |
3,016 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 65pF @ 4V, 1MHz | - | 100 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 850 mV @ 500 mA |
|
|
SF21GHR0GDIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation |
3,983 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
|
SFS1603G MNGDIODE GEN PURP 150V 16A TO263AB Taiwan Semiconductor Corporation |
2,397 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 16A | -55°C ~ 150°C | 975 mV @ 8 A | |
|
|
ES1DLHM2GDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,688 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
SR102 R1GDIODE SCHOTTKY 20V 1A DO204AL Taiwan Semiconductor Corporation |
2,312 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | |
|
|
SF22G R0GDIODE GEN PURP 100V 2A DO204AC Taiwan Semiconductor Corporation |
2,495 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
SFS1603GHMNGDIODE GEN PURP 150V 16A TO263AB Taiwan Semiconductor Corporation |
2,219 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 16A | -55°C ~ 150°C | 975 mV @ 8 A |
|
|
ES1DLHMHGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,713 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
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