Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
HER303G R0G

HER303G R0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation
3,765 -

RFQ

HER303G R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 60pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 3A -55°C ~ 150°C 1 V @ 3 A
SFS1007G MNG

SFS1007G MNG

DIODE GEN PURP 500V 10A TO263AB

Taiwan Semiconductor Corporation
3,232 -

RFQ

SFS1007G MNG

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 35 ns 1 µA @ 500 V 500 V 10A -55°C ~ 150°C 1.7 V @ 5 A
ES1BLHMHG

ES1BLHMHG

DIODE GEN PURP 100V 1A SUB SMA

Taiwan Semiconductor Corporation
3,525 -

RFQ

ES1BLHMHG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 950 mV @ 1 A
SR005 R1G

SR005 R1G

DIODE SCHOTTKY 50V 500MA DO204AL

Taiwan Semiconductor Corporation
2,491 -

RFQ

SR005 R1G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 80pF @ 4V, 1MHz - 500 µA @ 50 V 50 V 500mA -55°C ~ 150°C 700 mV @ 500 mA
HER601G R0G

HER601G R0G

DIODE GEN PURP 50V 6A R-6

Taiwan Semiconductor Corporation
3,883 -

RFQ

HER601G R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 6A -55°C ~ 150°C 1 V @ 6 A
SFS1007GHMNG

SFS1007GHMNG

DIODE GEN PURP 500V 10A TO263AB

Taiwan Semiconductor Corporation
2,050 -

RFQ

SFS1007GHMNG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 35 ns 1 µA @ 500 V 500 V 10A -55°C ~ 150°C 1.7 V @ 5 A
ES1C M2G

ES1C M2G

DIODE GEN PURP 150V 1A DO214AC

Taiwan Semiconductor Corporation
2,007 -

RFQ

ES1C M2G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 16pF @ 1V, 1MHz 35 ns 5 µA @ 150 V 150 V 1A -55°C ~ 150°C 950 mV @ 1 A
SR005HR1G

SR005HR1G

DIODE SCHOTTKY 50V 500MA DO204AL

Taiwan Semiconductor Corporation
2,742 -

RFQ

SR005HR1G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 80pF @ 4V, 1MHz - 500 µA @ 50 V 50 V 500mA -55°C ~ 150°C 700 mV @ 500 mA
HER602G R0G

HER602G R0G

DIODE GEN PURP 100V 6A R-6

Taiwan Semiconductor Corporation
3,686 -

RFQ

HER602G R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 6A -55°C ~ 150°C 1 V @ 6 A
SFS1008G MNG

SFS1008G MNG

DIODE GEN PURP 600V 10A TO263AB

Taiwan Semiconductor Corporation
3,976 -

RFQ

SFS1008G MNG

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 35 ns 1 µA @ 600 V 600 V 10A -55°C ~ 150°C 1.7 V @ 5 A
ES1CHM2G

ES1CHM2G

DIODE GEN PURP 150V 1A DO214AC

Taiwan Semiconductor Corporation
2,358 -

RFQ

ES1CHM2G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 16pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 1A -55°C ~ 150°C 950 mV @ 1 A
SR006 R1G

SR006 R1G

DIODE SCHOTTKY 60V 500MA DO204AL

Taiwan Semiconductor Corporation
2,018 -

RFQ

SR006 R1G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 80pF @ 4V, 1MHz - 500 µA @ 60 V 60 V 500mA -55°C ~ 150°C 700 mV @ 500 mA
HER603G R0G

HER603G R0G

DIODE GEN PURP 200V 6A R-6

Taiwan Semiconductor Corporation
3,015 -

RFQ

HER603G R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 6A -55°C ~ 150°C 1 V @ 6 A
SFS1008GHMNG

SFS1008GHMNG

DIODE GEN PURP 600V 10A TO263AB

Taiwan Semiconductor Corporation
2,070 -

RFQ

SFS1008GHMNG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 35 ns 1 µA @ 600 V 600 V 10A -55°C ~ 150°C 1.7 V @ 5 A
ES1CL M2G

ES1CL M2G

DIODE GEN PURP 150V 1A SUB SMA

Taiwan Semiconductor Corporation
2,195 -

RFQ

ES1CL M2G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 1V, 1MHz 35 ns 5 µA @ 150 V 150 V 1A -55°C ~ 150°C 950 mV @ 1 A
SR006HR1G

SR006HR1G

DIODE SCHOTTKY 60V 500MA DO204AL

Taiwan Semiconductor Corporation
3,132 -

RFQ

SR006HR1G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 80pF @ 4V, 1MHz - 500 µA @ 60 V 60 V 500mA -55°C ~ 150°C 700 mV @ 500 mA
HT11G R0G

HT11G R0G

DIODE GEN PURP 50V 1A TS-1

Taiwan Semiconductor Corporation
3,076 -

RFQ

HT11G R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
SFS1601G MNG

SFS1601G MNG

DIODE GEN PURP 50V 16A TO263AB

Taiwan Semiconductor Corporation
2,691 -

RFQ

SFS1601G MNG

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 80pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 16A -55°C ~ 150°C 975 mV @ 8 A
SS320LWHRVG

SS320LWHRVG

DIODE SCHOTTKY 200V 3A SOD123W

Taiwan Semiconductor Corporation
3,389 -

RFQ

SS320LWHRVG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 10 µA @ 200 V 200 V 3A -55°C ~ 150°C 950 mV @ 3 A
ES1CL MHG

ES1CL MHG

DIODE GEN PURP 150V 1A SUB SMA

Taiwan Semiconductor Corporation
3,440 -

RFQ

ES1CL MHG

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 1V, 1MHz 35 ns 5 µA @ 150 V 150 V 1A -55°C ~ 150°C 950 mV @ 1 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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