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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MUR160A R1GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,913 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 4V, 1MHz | 50 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A | |
|
F1T1GHR0GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
3,191 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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|
SFAS802G MNGDIODE GEN PURP 100V 8A TO263AB Taiwan Semiconductor Corporation |
2,025 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
ES1DLW RVGDIODE GEN PURP 200V 1A SOD123W Taiwan Semiconductor Corporation |
3,429 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 950 mV @ 1 A | |
|
BAT42W RHGDIODE SCHOTTKY 30V 200MA SOD123 Taiwan Semiconductor Corporation |
3,708 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA (DC) | -55°C ~ 125°C | 1 V @ 200 mA | |
|
|
MUR160AHR1GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,672 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 4V, 1MHz | 50 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
|
|
F1T2G R0GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
3,626 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
SFAS802GHMNGDIODE GEN PURP 100V 8A TO263AB Taiwan Semiconductor Corporation |
2,469 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A |
|
|
MUR190A R1GDIODE GEN PURP 900V 1A DO204AL Taiwan Semiconductor Corporation |
3,931 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 900 V | 900 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A | |
|
|
F1T2GHR0GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
2,583 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
SFAS803G MNGDIODE GEN PURP 150V 8A TO263AB Taiwan Semiconductor Corporation |
3,512 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
|
MUR190AHR1GDIODE GEN PURP 900V 1A DO204AL Taiwan Semiconductor Corporation |
2,523 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 900 V | 900 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A |
|
|
F1T3G R0GDIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation |
2,070 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
SFAS803GHMNGDIODE GEN PURP 150V 8A TO263AB Taiwan Semiconductor Corporation |
3,389 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A |
|
|
SF11G R1GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,502 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
F1T3GHR0GDIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation |
2,263 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
SFAS804G MNGDIODE GEN PURP 200V 8A TO263AB Taiwan Semiconductor Corporation |
3,201 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
|
SF11GHR1GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
2,482 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
FR151G R0GDIODE GEN PURP 50V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,464 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
SFAS804GHMNGDIODE GEN PURP 200V 8A TO263AB Taiwan Semiconductor Corporation |
2,276 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A |
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