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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BA157GHR1GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,205 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
S1BLHRHGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,077 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
1N5400G R0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
2,620 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
|
BA158G R1GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
3,390 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
|
S1DL RHGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,279 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N5400GHR0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
3,795 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A |
|
|
BA158GHR1GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
3,594 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
|
S1DLHRHGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
2,145 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
|
1N5401G R0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
3,112 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
|
BA159G R1GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
2,351 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
|
S1GL RHGDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
3,048 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N5401GHR0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
3,780 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A |
|
|
BA159GHR1GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
2,675 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
|
S1GLHRHGDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
2,154 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
|
1N5402GHR0GDIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation |
2,238 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A |
|
|
FR101G R1GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
2,657 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
S1JL RHGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
2,891 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
1T1G R0GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
2,817 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
FR102G R1GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,070 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
S1JLHRHGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
3,297 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
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