Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
1T2G R0G

1T2G R0G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Corporation
3,711 -

RFQ

1T2G R0G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 10pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.1 V @ 1 A
FR103G R1G

FR103G R1G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation
3,526 -

RFQ

FR103G R1G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.3 V @ 1 A
S1KL RHG

S1KL RHG

DIODE GEN PURP 800V 1A SUB SMA

Taiwan Semiconductor Corporation
3,896 -

RFQ

S1KL RHG

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 800 V 800 V 1A -55°C ~ 175°C 1.1 V @ 1 A
1T3G R0G

1T3G R0G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation
3,482 -

RFQ

1T3G R0G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 10pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
FR104G R1G

FR104G R1G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation
2,528 -

RFQ

FR104G R1G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
S1KLHRHG

S1KLHRHG

DIODE GEN PURP 800V 1A SUB SMA

Taiwan Semiconductor Corporation
3,383 -

RFQ

S1KLHRHG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 800 V 800 V 1A -55°C ~ 175°C 1.1 V @ 1 A
2A01G R0G

2A01G R0G

DIODE GEN PURP 50V 2A DO204AC

Taiwan Semiconductor Corporation
2,653 -

RFQ

2A01G R0G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 15pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 1.1 V @ 2 A
FR105G R1G

FR105G R1G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation
2,666 -

RFQ

FR105G R1G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.3 V @ 1 A
S1ML RHG

S1ML RHG

DIODE GEN PURP 1000V 1A SUB SMA

Taiwan Semiconductor Corporation
2,869 -

RFQ

S1ML RHG

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 1000 V - 1A -55°C ~ 175°C 1.1 V @ 1 A
2A01GHR0G

2A01GHR0G

DIODE GEN PURP 50V 2A DO204AC

Taiwan Semiconductor Corporation
3,879 -

RFQ

2A01GHR0G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 15pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 1.1 V @ 2 A
ES1GL R3G

ES1GL R3G

DIODE GEN PURP 400V 1A SUB SMA

Taiwan Semiconductor Corporation
2,650 -

RFQ

ES1GL R3G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 8pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
FR106G R1G

FR106G R1G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation
3,868 -

RFQ

FR106G R1G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 500 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.3 V @ 1 A
S1MLHRHG

S1MLHRHG

DIODE GEN PURP 1000V 1A SUB SMA

Taiwan Semiconductor Corporation
2,900 -

RFQ

S1MLHRHG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 1000 V - 1A -55°C ~ 175°C 1.1 V @ 1 A
2A02G R0G

2A02G R0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation
3,263 -

RFQ

2A02G R0G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 15pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 2A -55°C ~ 150°C 1.1 V @ 2 A
FR107G R1G

FR107G R1G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation
3,438 -

RFQ

FR107G R1G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.3 V @ 1 A
SS110L RHG

SS110L RHG

DIODE SCHOTTKY 100V 1A SUB SMA

Taiwan Semiconductor Corporation
2,699 -

RFQ

SS110L RHG

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 50 µA @ 100 V 100 V 1A -55°C ~ 150°C 800 mV @ 1 A
2A02GHR0G

2A02GHR0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation
3,865 -

RFQ

2A02GHR0G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 15pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 2A -55°C ~ 150°C 1.1 V @ 2 A
HER101G R1G

HER101G R1G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation
2,288 -

RFQ

HER101G R1G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
SS110LHRHG

SS110LHRHG

DIODE SCHOTTKY 100V 1A SUB SMA

Taiwan Semiconductor Corporation
2,349 -

RFQ

SS110LHRHG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 50 µA @ 100 V 100 V 1A -55°C ~ 150°C 800 mV @ 1 A
2A03G R0G

2A03G R0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation
3,537 -

RFQ

2A03G R0G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 15pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 2A -55°C ~ 150°C 1 V @ 2 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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