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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HER102G R1GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,571 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
2A03GHR0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
2,772 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1 V @ 2 A |
|
|
HER103G R1GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
2,259 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
6A05G R0GDIODE GEN PURP 50V 6A R-6 Taiwan Semiconductor Corporation |
3,809 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 6A | -55°C ~ 150°C | 1.1 V @ 6 A | |
|
|
HER104G R1GDIODE GEN PURP 300V 1A DO204AL Taiwan Semiconductor Corporation |
2,155 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
6A05GHR0GDIODE GEN PURP 50V 6A R-6 Taiwan Semiconductor Corporation |
3,934 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 6A | -55°C ~ 150°C | 1.1 V @ 6 A |
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|
MBRS1690HMNGDIODE SCHOTTKY 90V 16A TO263AB Taiwan Semiconductor Corporation |
3,603 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 90 V | 90 V | 16A | -55°C ~ 150°C | 850 mV @ 16 A |
|
|
HER105G R1GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
2,216 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
BAS316WS RRGDIODE GEN PURP 250MA SOD323F Taiwan Semiconductor Corporation |
2,115 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 4 ns | 1 µA @ 75 V | 100 V | 250mA | -65°C ~ 150°C | 1.25 V @ 150 mA | |
|
|
6A10GHR0GDIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation |
2,713 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 6A | -55°C ~ 150°C | 1.1 V @ 6 A |
|
|
SFAS1008G MNGDIODE GEN PURP 600V 10A TO263AB Taiwan Semiconductor Corporation |
3,449 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.7 V @ 10 A | |
|
|
HER106G R1GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
3,186 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
6A20G R0GDIODE GEN PURP 200V 6A R-6 Taiwan Semiconductor Corporation |
3,663 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
SFAS1008GHMNGDIODE GEN PURP 600V 10A TO263AB Taiwan Semiconductor Corporation |
3,817 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.7 V @ 10 A |
|
|
HER107G R1GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
3,030 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
6A20GHR0GDIODE GEN PURP 200V 6A R-6 Taiwan Semiconductor Corporation |
3,482 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
|
|
SFAS801G MNGDIODE GEN PURP 50V 8A TO263AB Taiwan Semiconductor Corporation |
3,771 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
|
HER108G R1GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
2,734 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
F1T1G R0GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
2,734 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
SFAS801GHMNGDIODE GEN PURP 50V 8A TO263AB Taiwan Semiconductor Corporation |
3,633 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A |
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