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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SFAS808G MNGDIODE GEN PURP 600V 8A TO263AB Taiwan Semiconductor Corporation |
3,176 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A | |
|
SF15GHR1GDIODE GEN PURP 300V 1A DO204AL Taiwan Semiconductor Corporation |
2,702 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
FR203G R0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
2,170 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
SFAS808GHMNGDIODE GEN PURP 600V 8A TO263AB Taiwan Semiconductor Corporation |
3,800 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A |
|
|
SF16G R1GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,520 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
FR301G R0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
3,446 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 30pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
|
SFS1001G MNGDIODE GEN PURP 50V 10A TO263AB Taiwan Semiconductor Corporation |
3,046 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 70pF @ 4V, 1MHz | 35 ns | 1 µA @ 50 V | 50 V | 10A | -55°C ~ 150°C | 975 mV @ 5 A | |
|
|
SF16GHR1GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,857 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
S15JLWHRVGDIODE GEN PURP 600V 1.5A SOD123W Taiwan Semiconductor Corporation |
3,765 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | - | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1.5 A | |
|
|
FR302G R0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
2,686 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 30pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
|
SFS1001GHMNGDIODE GEN PURP 50V 10A TO263AB Taiwan Semiconductor Corporation |
2,618 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 70pF @ 4V, 1MHz | 35 ns | 1 µA @ 50 V | 50 V | 10A | -55°C ~ 150°C | 975 mV @ 5 A |
|
|
SF17G R1GDIODE GEN PURP 500V 1A DO204AL Taiwan Semiconductor Corporation |
3,005 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
FR303G R0GDIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation |
2,908 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 30pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
|
SFS1002G MNGDIODE GEN PURP 100V 10A TO263AB Taiwan Semiconductor Corporation |
3,997 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 70pF @ 4V, 1MHz | 35 ns | 1 µA @ 100 V | 100 V | 10A | -55°C ~ 150°C | 975 mV @ 5 A | |
|
|
SF17GHR1GDIODE GEN PURP 500V 1A DO204AL Taiwan Semiconductor Corporation |
2,188 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
HER151G R0GDIODE GEN PURP 50V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,234 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
|
SFS1002GHMNGDIODE GEN PURP 100V 10A TO263AB Taiwan Semiconductor Corporation |
2,772 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 70pF @ 4V, 1MHz | 35 ns | 1 µA @ 100 V | 100 V | 10A | -55°C ~ 150°C | 975 mV @ 5 A |
|
|
SF18G R1GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,236 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
HER152G R0GDIODE GEN PURP 100V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,449 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
|
SFS1003G MNGDIODE GEN PURP 150V 10A TO263AB Taiwan Semiconductor Corporation |
3,113 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 70pF @ 4V, 1MHz | 35 ns | 1 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 975 mV @ 5 A |
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