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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RSFKL RHGDIODE GEN PURP 800V 500MA SUBSMA Taiwan Semiconductor Corporation |
2,239 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
TSPB5H120S S2GDIODE SCHOTTKY 120V 5A SMPC4.0 Taiwan Semiconductor Corporation |
3,243 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 150 µA @ 120 V | 120 V | 5A | -55°C ~ 150°C | 740 mV @ 5 A | |
|
1N5817HR1GDIODE SCHOTTKY 20V 1A DO204AL Taiwan Semiconductor Corporation |
3,458 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 55pF @ 4V, 1MHz | - | 1 mA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 450 mV @ 1 A |
|
|
RSFKLHRHGDIODE GEN PURP 800V 500MA SUBSMA Taiwan Semiconductor Corporation |
2,516 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA |
|
1N5391G R0GDIODE GEN PURP 50V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,684 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A | |
|
|
1N5818 R1GDIODE SCHOTTKY 30V 1A DO204AL Taiwan Semiconductor Corporation |
2,360 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 55pF @ 4V, 1MHz | - | 1 mA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | |
|
|
RSFML RHGDIODE GEN PURP 500MA SUB SMA Taiwan Semiconductor Corporation |
2,672 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
|
1N5391GHR0GDIODE GEN PURP 50V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,529 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A |
|
|
1N5818HR1GDIODE SCHOTTKY 30V 1A DO204AL Taiwan Semiconductor Corporation |
3,002 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 55pF @ 4V, 1MHz | - | 1 mA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |
|
|
RSFMLHRHGDIODE GEN PURP 500MA SUB SMA Taiwan Semiconductor Corporation |
3,272 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA |
|
|
1N5392G R0GDIODE GEN PURP 100V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,144 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A | |
|
|
1N5819 R1GDIODE SCHOTTKY 40V 1A DO204AL Taiwan Semiconductor Corporation |
2,299 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 55pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 600 mV @ 1 A | |
|
|
S1AL RHGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
3,375 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N5392GHR0GDIODE GEN PURP 100V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,444 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A |
|
|
1N5819HR1GDIODE SCHOTTKY 40V 1A DO204AL Taiwan Semiconductor Corporation |
3,062 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 55pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 600 mV @ 1 A |
|
|
S1ALHRHGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
3,174 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
|
1N5393G R0GDIODE GEN PURP 200V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,743 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
|
BA157G R1GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,549 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
|
S1BL RHGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,750 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N5393GHR0GDIODE GEN PURP 200V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,314 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A |
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