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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4007G R1GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
2,255 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
RS1KLHRHGDIODE GEN PURP 800V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,887 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
|
|
SS26L RHGDIODE SCHOTTKY 60V 2A SUB SMA Taiwan Semiconductor Corporation |
3,568 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A | |
|
|
1N4007GHR1GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
2,802 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
|
RS1ML RHGDIODE GEN PURP 800MA SUB SMA Taiwan Semiconductor Corporation |
3,130 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
SS26LHRHGDIODE SCHOTTKY 60V 2A SUB SMA Taiwan Semiconductor Corporation |
2,244 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A |
|
|
1N4933G R1GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
2,460 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
|
RSFAL RHGDIODE GEN PURP 50V 500MA SUB SMA Taiwan Semiconductor Corporation |
2,552 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
|
SS29L RHGDIODE SCHOTTKY 90V 2A SUB SMA Taiwan Semiconductor Corporation |
2,344 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A | |
|
|
1N4933GHR1GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,562 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
|
RSFALHRHGDIODE GEN PURP 50V 500MA SUB SMA Taiwan Semiconductor Corporation |
2,584 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA |
|
|
SS29LHRHGDIODE SCHOTTKY 90V 2A SUB SMA Taiwan Semiconductor Corporation |
3,047 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A |
|
|
1N4934G R1GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,636 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
|
RSFBL RHGDIODE GEN PURP 100V 500MA SUBSMA Taiwan Semiconductor Corporation |
2,665 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
|
SS310L RHGDIODE SCHOTTKY 100V 3A SUB SMA Taiwan Semiconductor Corporation |
2,904 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A | |
|
|
1N4934GHR1GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,201 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
|
RSFBLHRHGDIODE GEN PURP 100V 500MA SUBSMA Taiwan Semiconductor Corporation |
2,674 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA |
|
|
SS310LHRHGDIODE SCHOTTKY 100V 3A SUB SMA Taiwan Semiconductor Corporation |
2,002 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A |
|
|
1N4935G R1GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
3,976 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
|
RSFDL RHGDIODE GEN PURP 200V 500MA SUBSMA Taiwan Semiconductor Corporation |
3,529 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA |
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