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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SF17G A0GDIODE GEN PURP 500V 1A DO204AL Taiwan Semiconductor Corporation |
2,561 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
MBRF5100HC0GDIODE SCHOTTKY 100V 5A ITO220AC Taiwan Semiconductor Corporation |
3,999 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 900 mV @ 5 A |
|
SR202HA0GDIODE SCHOTTKY 20V 2A DO204AC Taiwan Semiconductor Corporation |
2,309 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 2A | -55°C ~ 125°C | 550 mV @ 2 A |
|
RSFDL M2GDIODE GEN PURP 200V 500MA SUBSMA Taiwan Semiconductor Corporation |
3,550 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
MBR7150 C0GDIODE SCHOTTKY 150V 7.5A TO220AC Taiwan Semiconductor Corporation |
2,822 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 7.5A | -55°C ~ 150°C | 950 mV @ 7.5 A | |
|
|
SS215L MHGDIODE SCHOTTKY 150V 2A SUB SMA Taiwan Semiconductor Corporation |
3,462 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
SF17GHA0GDIODE GEN PURP 500V 1A DO204AL Taiwan Semiconductor Corporation |
2,842 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
MBRF5150 C0GDIODE SCHOTTKY 150V 5A ITO220AC Taiwan Semiconductor Corporation |
3,826 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 5A | -55°C ~ 150°C | 1.02 V @ 5 A | |
|
|
SR203 A0GDIODE SCHOTTKY 30V 2A DO204AC Taiwan Semiconductor Corporation |
2,601 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 2A | -55°C ~ 125°C | 550 mV @ 2 A | |
|
|
RSFDL MHGDIODE GEN PURP 200V 500MA SUBSMA Taiwan Semiconductor Corporation |
3,528 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
|
MBR7150HC0GDIODE SCHOTTKY 150V 7.5A TO220AC Taiwan Semiconductor Corporation |
3,838 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 7.5A | -55°C ~ 150°C | 950 mV @ 7.5 A |
|
|
SS215LHM2GDIODE SCHOTTKY 150V 2A SUB SMA Taiwan Semiconductor Corporation |
2,606 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
|
SF18GHA0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
3,515 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
MBRF5150HC0GDIODE SCHOTTKY 150V 5A ITO220AC Taiwan Semiconductor Corporation |
3,756 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 150 V | 150 V | 5A | -55°C ~ 150°C | 1.02 V @ 5 A |
|
|
SR203HA0GDIODE SCHOTTKY 30V 2A DO204AC Taiwan Semiconductor Corporation |
2,237 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 2A | -55°C ~ 125°C | 550 mV @ 2 A |
|
|
RSFDLHM2GDIODE GEN PURP 200V 500MA SUBSMA Taiwan Semiconductor Corporation |
3,915 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA |
|
|
MBR735 C0GDIODE SCHOTTKY 35V 7.5A TO220AC Taiwan Semiconductor Corporation |
2,865 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 35 V | 35 V | 7.5A | -55°C ~ 150°C | 840 mV @ 15 A | |
|
|
SS215LHMHGDIODE SCHOTTKY 150V 2A SUB SMA Taiwan Semiconductor Corporation |
2,582 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
|
SR002 A0GDIODE SCHOTTKY 20V 500MA DO204AL Taiwan Semiconductor Corporation |
2,313 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 110pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 500mA | -55°C ~ 125°C | 550 mV @ 500 mA | |
|
|
MBRF5200 C0GDIODE SCHOTTKY 200V 5A ITO220AC Taiwan Semiconductor Corporation |
3,821 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 200 V | 200 V | 5A | -55°C ~ 150°C | 1.02 V @ 5 A |
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