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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MBRF2035 C0GDIODE SCHOTTKY 35V 20A ITO220AC Taiwan Semiconductor Corporation |
3,763 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 35 V | 35 V | 20A | -55°C ~ 150°C | 750 mV @ 20 A | |
|
SR1203 A0GDIODE SCHOTTKY 30V 12A DO201AD Taiwan Semiconductor Corporation |
3,397 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 12A | -50°C ~ 150°C | 550 mV @ 12 A | |
|
MBR1635HC0GDIODE SCHOTTKY 35V 16A TO220AC Taiwan Semiconductor Corporation |
3,695 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 35 V | 35 V | 16A | -55°C ~ 150°C | 630 mV @ 16 A |
|
SS19 M2GDIODE SCHOTTKY 90V 1A DO214AC Taiwan Semiconductor Corporation |
2,283 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A | |
|
SF12G A0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,329 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
MBRF2035HC0GDIODE SCHOTTKY 35V 20A ITO220AC Taiwan Semiconductor Corporation |
2,795 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 200 µA @ 35 V | 35 V | 20A | -55°C ~ 150°C | 750 mV @ 20 A |
|
|
SR1203HA0GDIODE SCHOTTKY 30V 12A DO201AD Taiwan Semiconductor Corporation |
2,991 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 12A | -50°C ~ 150°C | 550 mV @ 12 A |
|
|
MBR1645 C0GDIODE SCHOTTKY 45V 16A TO220AC Taiwan Semiconductor Corporation |
2,568 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 45 V | 45 V | 16A | -55°C ~ 150°C | 630 mV @ 16 A | |
|
|
SS19HM2GDIODE SCHOTTKY 90V 1A DO214AC Taiwan Semiconductor Corporation |
3,867 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A |
|
|
SF12GHA0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,630 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
MBRF2045 C0GDIODE SCHOTTKY 45V 20A ITO220AC Taiwan Semiconductor Corporation |
2,550 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 200 µA @ 45 V | 45 V | 20A | -55°C ~ 150°C | 750 mV @ 20 A | |
|
|
SR1204 A0GDIODE SCHOTTKY 40V 12A DO201AD Taiwan Semiconductor Corporation |
3,858 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 12A | -50°C ~ 150°C | 550 mV @ 12 A | |
|
|
MBR1645HC0GDIODE SCHOTTKY 45V 16A TO220AC Taiwan Semiconductor Corporation |
3,641 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 45 V | 45 V | 16A | -55°C ~ 150°C | 630 mV @ 16 A |
|
SS19L M2GDIODE SCHOTTKY 90V 1A SUB SMA Taiwan Semiconductor Corporation |
2,633 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A | |
|
|
SF13G A0GDIODE GEN PURP 150V 1A DO204AL Taiwan Semiconductor Corporation |
2,242 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
MBRF2045HC0GDIODE SCHOTTKY 45V 20A ITO220AC Taiwan Semiconductor Corporation |
3,311 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 200 µA @ 45 V | 45 V | 20A | -55°C ~ 150°C | 750 mV @ 20 A |
|
|
SR1204HA0GDIODE SCHOTTKY 40V 12A DO201AD Taiwan Semiconductor Corporation |
3,830 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 12A | -50°C ~ 150°C | 550 mV @ 12 A |
|
|
MBR1650 C0GDIODE SCHOTTKY 50V 16A TO220AC Taiwan Semiconductor Corporation |
3,217 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 50 V | 50 V | 16A | -55°C ~ 150°C | 750 mV @ 16 A | |
|
|
SS19L MHGDIODE SCHOTTKY 90V 1A SUB SMA Taiwan Semiconductor Corporation |
2,595 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A | |
|
|
SF13GHA0GDIODE GEN PURP 150V 1A DO204AL Taiwan Semiconductor Corporation |
3,323 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
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