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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
MBRF1650HC0G DIODE SCHOTTKY 50V 16A ITO220AC Taiwan Semiconductor Corporation	3,407	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	16A	-55°C ~ 150°C	750 mV @ 16 A
SFT18G A0G DIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation	3,043	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
MBR1060HC0G DIODE SCHOTTKY 60V 10A TO220AC Taiwan Semiconductor Corporation	3,658	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 60 V	60 V	10A	-55°C ~ 150°C	800 mV @ 10 A
SS15L M2G DIODE SCHOTTKY 50V 1A SUB SMA Taiwan Semiconductor Corporation	3,161	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 50 V	50 V	1A	-55°C ~ 150°C	700 mV @ 1 A
HER103G A0G DIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation	2,829	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	50 ns	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	1 V @ 1 A
MBRF1660 C0G DIODE SCHOTTKY 60V 16A ITO220AC Taiwan Semiconductor Corporation	2,663	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	500 µA @ 60 V	60 V	16A	-55°C ~ 150°C	750 mV @ 16 A
SFT18GHA0G DIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation	2,146	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
MBR1090 C0G DIODE GEN PURP 90V 10A TO220AC Taiwan Semiconductor Corporation	2,248	-	RFQ	Ficha técnica	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 90 V	90 V	10A	-55°C ~ 150°C	850 mV @ 10 A
SS15L MHG DIODE SCHOTTKY 50V 1A SUB SMA Taiwan Semiconductor Corporation	2,801	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 50 V	50 V	1A	-55°C ~ 150°C	700 mV @ 1 A
HER104G A0G DIODE GEN PURP 300V 1A DO204AL Taiwan Semiconductor Corporation	3,263	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	50 ns	5 µA @ 300 V	300 V	1A	-55°C ~ 150°C	1 V @ 1 A
MBRF1660HC0G DIODE SCHOTTKY 60V 16A ITO220AC Taiwan Semiconductor Corporation	3,912	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	500 µA @ 60 V	60 V	16A	-55°C ~ 150°C	750 mV @ 16 A
SK12H45 A0G DIODE SCHOTTKY 45V 12A DO201AD Taiwan Semiconductor Corporation	3,124	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	120 µA @ 45 V	45 V	12A	200°C (Max)	550 mV @ 12 A
MBR1090HC0G DIODE GEN PURP 90V 10A TO220AC Taiwan Semiconductor Corporation	2,305	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 90 V	90 V	10A	-55°C ~ 150°C	850 mV @ 10 A
SS15LHM2G DIODE SCHOTTKY 50V 1A SUB SMA Taiwan Semiconductor Corporation	2,150	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 50 V	50 V	1A	-55°C ~ 150°C	700 mV @ 1 A
HER105G A0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	3,836	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	50 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
MBRF1690 C0G DIODE SCHOTTKY 90V 16A ITO220AC Taiwan Semiconductor Corporation	2,730	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	300 µA @ 90 V	90 V	16A	-55°C ~ 150°C	850 mV @ 16 A
SK12H60 A0G DIODE SCHOTTKY 60V 12A DO201AD Taiwan Semiconductor Corporation	2,516	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	120 µA @ 60 V	60 V	12A	200°C (Max)	700 mV @ 12 A
MBR16100 C0G DIODE SCHOTTKY 100V 16A TO220AC Taiwan Semiconductor Corporation	2,157	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	300 µA @ 100 V	100 V	16A	-55°C ~ 150°C	850 mV @ 16 A
SS15LHMHG DIODE SCHOTTKY 50V 1A SUB SMA Taiwan Semiconductor Corporation	3,237	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 50 V	50 V	1A	-55°C ~ 150°C	700 mV @ 1 A
MUR160A A0G DIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation	3,715	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	27pF @ 4V, 1MHz	50 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 175°C	1.25 V @ 1 A