Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
HERAF807G C0G

HERAF807G C0G

DIODE GEN PURP 800V 8A ITO220AC

Taiwan Semiconductor Corporation
3,490 -

RFQ

HERAF807G C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 60pF @ 4V, 1MHz 80 ns 10 µA @ 800 V 800 V 8A -55°C ~ 150°C 1.7 V @ 8 A
SS12L MHG

SS12L MHG

DIODE SCHOTTKY 20V 1A SUB SMA

Taiwan Semiconductor Corporation
2,680 -

RFQ

SS12L MHG

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 20 V 20 V 1A -55°C ~ 125°C 450 mV @ 1 A
BA158G A0G

BA158G A0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation
2,933 -

RFQ

BA158G A0G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.2 V @ 1 A
MBRF1090 C0G

MBRF1090 C0G

DIODE SCHOTTKY 90V 10A ITO220AC

Taiwan Semiconductor Corporation
2,622 -

RFQ

MBRF1090 C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 10A -55°C ~ 150°C 850 mV @ 10 A
SFT12GHA0G

SFT12GHA0G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Corporation
3,694 -

RFQ

SFT12GHA0G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 950 mV @ 1 A
MBR10100 C0G

MBR10100 C0G

DIODE SCHOTTKY 100V 10A TO220AC

Taiwan Semiconductor Corporation
3,535 -

RFQ

MBR10100 C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 100 V 100 V 10A -55°C ~ 150°C 850 mV @ 10 A
SS12LHM2G

SS12LHM2G

DIODE SCHOTTKY 20V 1A SUB SMA

Taiwan Semiconductor Corporation
2,593 -

RFQ

SS12LHM2G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 20 V 20 V 1A -55°C ~ 125°C 450 mV @ 1 A
BA158GHA0G

BA158GHA0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation
2,361 -

RFQ

BA158GHA0G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.2 V @ 1 A
MBRF1090HC0G

MBRF1090HC0G

DIODE SCHOTTKY 90V 10A ITO220AC

Taiwan Semiconductor Corporation
2,025 -

RFQ

MBRF1090HC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 90 V 90 V 10A -55°C ~ 150°C 850 mV @ 10 A
SFT13G A0G

SFT13G A0G

DIODE GEN PURP 150V 1A TS-1

Taiwan Semiconductor Corporation
3,136 -

RFQ

SFT13G A0G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 1A -55°C ~ 150°C 950 mV @ 1 A
MBR10150 C0G

MBR10150 C0G

DIODE GEN PURP 150V 10A TO220AC

Taiwan Semiconductor Corporation
2,555 -

RFQ

MBR10150 C0G

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - - 100 µA @ 150 V 150 V 10A -55°C ~ 150°C 1.05 V @ 10 A
SS12LHMHG

SS12LHMHG

DIODE SCHOTTKY 20V 1A SUB SMA

Taiwan Semiconductor Corporation
3,365 -

RFQ

SS12LHMHG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 20 V 20 V 1A -55°C ~ 125°C 450 mV @ 1 A
BA159GHA0G

BA159GHA0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation
3,161 -

RFQ

BA159GHA0G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 250 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.2 V @ 1 A
MBRF16100 C0G

MBRF16100 C0G

DIODE SCHOTTKY 100V 16A ITO220AC

Taiwan Semiconductor Corporation
3,710 -

RFQ

MBRF16100 C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 300 µA @ 100 V 100 V 16A -55°C ~ 150°C 850 mV @ 16 A
SFT13GHA0G

SFT13GHA0G

DIODE GEN PURP 150V 1A TS-1

Taiwan Semiconductor Corporation
2,199 -

RFQ

SFT13GHA0G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 1A -55°C ~ 150°C 950 mV @ 1 A
MBR10150HC0G

MBR10150HC0G

DIODE GEN PURP 150V 10A TO220AC

Taiwan Semiconductor Corporation
3,799 -

RFQ

MBR10150HC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - - 100 µA @ 150 V 150 V 10A -55°C ~ 150°C 1.05 V @ 10 A
SS13L M2G

SS13L M2G

DIODE SCHOTTKY 30V 1A SUB SMA

Taiwan Semiconductor Corporation
2,398 -

RFQ

SS13L M2G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 30 V 30 V 1A -55°C ~ 125°C 500 mV @ 1 A
BAT42 A0G

BAT42 A0G

DIODE SCHOTTKY 30V 200MA DO35

Taiwan Semiconductor Corporation
2,592 -

RFQ

Tape & Box (TB) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Obsolete Through Hole 7pF @ 1V, 1MHz 5 ns 100 nA @ 25 V 30 V 200mA -65°C ~ 125°C 650 mV @ 50 mA
MBRF16100HC0G

MBRF16100HC0G

DIODE SCHOTTKY 100V 16A ITO220AC

Taiwan Semiconductor Corporation
3,768 -

RFQ

MBRF16100HC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 300 µA @ 100 V 100 V 16A -55°C ~ 150°C 850 mV @ 16 A
SFT14G A0G

SFT14G A0G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation
2,017 -

RFQ

SFT14G A0G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 950 mV @ 1 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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