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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
SS110LHR3G DIODE SCHOTTKY 100V 1A SUB SMA Taiwan Semiconductor Corporation	3,460	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	50 µA @ 100 V	100 V	1A	-55°C ~ 150°C	800 mV @ 1 A
1N4006G A0G DIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation	2,109	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	-	5 µA @ 800 V	800 V	1A	-55°C ~ 150°C	1 V @ 1 A
HERAF1001G C0G DIODE GEN PURP 50V 10A ITO220AC Taiwan Semiconductor Corporation	3,941	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 50 V	50 V	10A	-55°C ~ 150°C	1 V @ 10 A
MBR745HC0G DIODE SCHOTTKY 50V 7.5A TO220AC Taiwan Semiconductor Corporation	2,247	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 50 V	50 V	7.5A	-55°C ~ 150°C	840 mV @ 15 A
SS110LHRFG DIODE SCHOTTKY 100V 1A SUB SMA Taiwan Semiconductor Corporation	3,413	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	50 µA @ 100 V	100 V	1A	-55°C ~ 150°C	800 mV @ 1 A
1N4006GHA0G DIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation	2,323	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	-	5 µA @ 800 V	800 V	1A	-55°C ~ 150°C	1 V @ 1 A
HERAF1002G C0G DIODE GEN PURP 100V 10A ITO220AC Taiwan Semiconductor Corporation	3,407	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 100 V	100 V	10A	-55°C ~ 150°C	1 V @ 10 A
MBR750 C0G DIODE SCHOTTKY 50V 7.5A TO220AC Taiwan Semiconductor Corporation	3,317	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 50 V	50 V	7.5A	-55°C ~ 150°C	750 mV @ 7.5 A
SS115HR3G DIODE SCHOTTKY 150V 1A DO214AC Taiwan Semiconductor Corporation	2,364	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	100 µA @ 150 V	150 V	1A	-55°C ~ 125°C	500 mV @ 1 A
1N4007GHA0G DIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation	3,870	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	-	5 µA @ 1000 V	1000 V	1A	-55°C ~ 150°C	1 V @ 1 A
HERAF1003G C0G DIODE GEN PURP 200V 10A ITO220AC Taiwan Semiconductor Corporation	3,618	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 200 V	200 V	10A	-55°C ~ 150°C	1 V @ 10 A
MBR750HC0G DIODE SCHOTTKY 60V 7.5A TO220AC Taiwan Semiconductor Corporation	3,054	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 60 V	60 V	7.5A	-55°C ~ 150°C	750 mV @ 7.5 A
SS115L R3G DIODE SCHOTTKY 150V 1A SUB SMA Taiwan Semiconductor Corporation	2,417	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	50 µA @ 150 V	150 V	1A	-55°C ~ 150°C	900 mV @ 1 A
1N4448 A0G DIODE GEN PURP 100V 150MA DO35 Taiwan Semiconductor Corporation	2,924	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	4pF @ 0V, 1MHz	4 ns	5 µA @ 75 V	100 V	150mA	-65°C ~ 150°C	720 mV @ 5 mA
HERAF1004G C0G DIODE GEN PURP 300V 10A ITO220AC Taiwan Semiconductor Corporation	2,280	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 300 V	300 V	10A	-55°C ~ 150°C	1 V @ 10 A
MBR760 C0G DIODE SCHOTTKY 60V 7.5A TO220AC Taiwan Semiconductor Corporation	3,166	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 60 V	60 V	7.5A	-55°C ~ 150°C	750 mV @ 7.5 A
SS115L RFG DIODE SCHOTTKY 150V 1A SUB SMA Taiwan Semiconductor Corporation	2,989	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	50 µA @ 150 V	150 V	1A	-55°C ~ 150°C	900 mV @ 1 A
1N4933G A0G DIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation	3,446	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	200 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
HERAF1005G C0G DIODE GEN PURP 400V 10A ITO220AC Taiwan Semiconductor Corporation	2,085	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	10A	-55°C ~ 150°C	1.3 V @ 10 A
MBR760HC0G DIODE SCHOTTKY 60V 7.5A TO220AC Taiwan Semiconductor Corporation	3,501	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 60 V	60 V	7.5A	-55°C ~ 150°C	750 mV @ 7.5 A