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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
1N4936G A0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	3,208	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	200 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
SF64GHA0G DIODE GEN PURP 200V 6A DO201AD Taiwan Semiconductor Corporation	3,562	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 200 V	200 V	6A	-55°C ~ 150°C	975 mV @ 6 A
HERAF1603G C0G DIODE GEN PURP 200V 16A ITO220AC Taiwan Semiconductor Corporation	2,625	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	150pF @ 4V, 1MHz	50 ns	10 µA @ 200 V	200 V	16A	-55°C ~ 150°C	1 V @ 16 A
MBRF10200HC0G DIODE SCHOTTKY 200V 10A ITO220AC Taiwan Semiconductor Corporation	2,442	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 200 V	200 V	10A	-55°C ~ 150°C	1.05 V @ 10 A
1N4936GHA0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	2,334	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	200 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
SF65G A0G DIODE GEN PURP 300V 6A DO201AD Taiwan Semiconductor Corporation	2,592	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	6A	-55°C ~ 150°C	1.3 V @ 6 A
HERAF1604G C0G DIODE GEN PURP 300V 16A ITO220AC Taiwan Semiconductor Corporation	2,781	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	150pF @ 4V, 1MHz	50 ns	10 µA @ 300 V	300 V	16A	-55°C ~ 150°C	1 V @ 16 A
MBRF1035 C0G DIODE SCHOTTKY 35V 10A ITO220AC Taiwan Semiconductor Corporation	2,129	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 35 V	35 V	10A	-55°C ~ 150°C	700 mV @ 10 A
1N4937G A0G DIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation	2,301	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	200 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
SF65GHA0G DIODE GEN PURP 300V 6A DO201AD Taiwan Semiconductor Corporation	2,116	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	6A	-55°C ~ 150°C	1.3 V @ 6 A
HERAF1605G C0G DIODE GEN PURP 400V 16A ITO220AC Taiwan Semiconductor Corporation	2,496	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	150pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	16A	-55°C ~ 150°C	1.3 V @ 16 A
1N4937GHA0G DIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation	2,132	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	200 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
MBRF1035HC0G DIODE SCHOTTKY 35V 10A ITO220AC Taiwan Semiconductor Corporation	3,171	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 35 V	35 V	10A	-55°C ~ 150°C	700 mV @ 10 A
SF66GHA0G DIODE GEN PURP 400V 6A DO201AD Taiwan Semiconductor Corporation	2,544	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	5 µA @ 400 V	400 V	6A	-55°C ~ 150°C	1.3 V @ 6 A
HERAF801G C0G DIODE GEN PURP 50V 8A ITO220AC Taiwan Semiconductor Corporation	3,366	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 50 V	50 V	8A	-55°C ~ 150°C	1 V @ 8 A
1N5817HA0G DIODE SCHOTTKY 20V 1A DO204AL Taiwan Semiconductor Corporation	3,198	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	55pF @ 4V, 1MHz	-	1 mA @ 20 V	20 V	1A	-55°C ~ 125°C	450 mV @ 1 A
MBRF1045 C0G DIODE SCHOTTKY 45V 10A ITO220AC Taiwan Semiconductor Corporation	3,894	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	100 µA @ 45 V	45 V	10A	-55°C ~ 150°C	700 mV @ 10 A
SF67G A0G DIODE GEN PURP 500V 6A DO201AD Taiwan Semiconductor Corporation	2,852	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	5 µA @ 500 V	500 V	6A	-55°C ~ 150°C	1.7 V @ 6 A
HERAF802G C0G DIODE GEN PURP 100V 8A ITO220AC Taiwan Semiconductor Corporation	3,172	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 100 V	100 V	8A	-55°C ~ 150°C	1 V @ 8 A
1N5818 A0G DIODE SCHOTTKY 30V 1A DO204AL Taiwan Semiconductor Corporation	3,303	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	55pF @ 4V, 1MHz	-	1 mA @ 30 V	30 V	1A	-55°C ~ 125°C	550 mV @ 1 A