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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
1N4933GHA0G DIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation	3,251	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	200 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
HERAF1006G C0G DIODE GEN PURP 600V 10A ITO220AC Taiwan Semiconductor Corporation	3,735	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	60pF @ 4V, 1MHz	80 ns	10 µA @ 600 V	600 V	10A	-55°C ~ 150°C	1.7 V @ 10 A
MBR790 C0G DIODE SCHOTTKY 90V 7.5A TO220AC Taiwan Semiconductor Corporation	3,683	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 90 V	90 V	7.5A	-55°C ~ 150°C	920 mV @ 7.5 A
1N4934G A0G DIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation	3,213	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	200 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
HERAF1007G C0G DIODE GEN PURP 800V 10A ITO220AC Taiwan Semiconductor Corporation	2,124	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	60pF @ 4V, 1MHz	80 ns	10 µA @ 800 V	800 V	10A	-55°C ~ 150°C	1.7 V @ 10 A
MBR790HC0G DIODE SCHOTTKY 90V 7.5A TO220AC Taiwan Semiconductor Corporation	2,321	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 90 V	90 V	7.5A	-55°C ~ 150°C	920 mV @ 7.5 A
1N4934GHA0G DIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation	3,232	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	200 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
SF62GHA0G DIODE GEN PURP 100V 6A DO201AD Taiwan Semiconductor Corporation	3,829	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	6A	-55°C ~ 150°C	975 mV @ 6 A
PU6BCH 25NS, 6A, 100V, ULTRA FAST RECOV Taiwan Semiconductor Corporation	3,030	-	RFQ		Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	110pF @ 4V, 1MHz	25 ns	2 µA @ 100 V	100 V	6A (DC)	-55°C ~ 175°C	940 mV @ 6 A
PU6DCH 25NS, 6A, 200V, ULTRA FAST RECOV Taiwan Semiconductor Corporation	2,789	-	RFQ		Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	110pF @ 4V, 1MHz	25 ns	2 µA @ 200 V	200 V	6A (DC)	-55°C ~ 175°C	940 mV @ 6 A
HERAF1008G C0G DIODE GEN PURP 10A ITO220AC Taiwan Semiconductor Corporation	2,297	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	60pF @ 4V, 1MHz	80 ns	10 µA @ 1000 V	-	10A	-55°C ~ 150°C	1.7 V @ 10 A
MBRF10100HC0G DIODE SCHOTTKY 100V 10A ITO220AC Taiwan Semiconductor Corporation	3,995	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	100 µA @ 100 V	100 V	10A	-55°C ~ 150°C	850 mV @ 10 A
1N4935G A0G DIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation	3,086	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	200 ns	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
SF63G A0G DIODE GEN PURP 150V 6A DO201AD Taiwan Semiconductor Corporation	3,463	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 150 V	150 V	6A	-55°C ~ 150°C	975 mV @ 6 A
HERAF1601G C0G DIODE GEN PURP 50V 16A ITO220AC Taiwan Semiconductor Corporation	3,440	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	150pF @ 4V, 1MHz	50 ns	10 µA @ 50 V	50 V	16A	-55°C ~ 150°C	1 V @ 16 A
MBRF10150 C0G DIODE SCHOTTKY 150V 10A ITO220AC Taiwan Semiconductor Corporation	2,811	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	100 µA @ 150 V	150 V	10A	-55°C ~ 150°C	1.05 V @ 10 A
1N4935GHA0G DIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation	3,733	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	200 ns	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
SF63GHA0G DIODE GEN PURP 150V 6A DO201AD Taiwan Semiconductor Corporation	3,150	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 150 V	150 V	6A	-55°C ~ 150°C	975 mV @ 6 A
HERAF1602G C0G DIODE GEN PURP 100V 16A ITO220AC Taiwan Semiconductor Corporation	3,839	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	150pF @ 4V, 1MHz	50 ns	10 µA @ 100 V	100 V	16A	-55°C ~ 150°C	1 V @ 16 A
MBRF10150HC0G DIODE SCHOTTKY 150V 10A ITO220AC Taiwan Semiconductor Corporation	3,745	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	10A	-55°C ~ 150°C	1.05 V @ 10 A