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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
MBRF1045HC0G DIODE SCHOTTKY 45V 10A ITO220AC Taiwan Semiconductor Corporation	3,002	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 45 V	45 V	10A	-55°C ~ 150°C	700 mV @ 10 A
SF67GHA0G DIODE GEN PURP 500V 6A DO201AD Taiwan Semiconductor Corporation	2,489	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	5 µA @ 500 V	500 V	6A	-55°C ~ 150°C	1.7 V @ 6 A
HERAF803G C0G DIODE GEN PURP 200V 8A ITO220AC Taiwan Semiconductor Corporation	3,148	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 200 V	200 V	8A	-55°C ~ 150°C	1 V @ 8 A
1N5818HA0G DIODE SCHOTTKY 30V 1A DO204AL Taiwan Semiconductor Corporation	2,275	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	55pF @ 4V, 1MHz	-	1 mA @ 30 V	30 V	1A	-55°C ~ 125°C	550 mV @ 1 A
MBRF1050 C0G DIODE SCHOTTKY 50V 10A ITO220AC Taiwan Semiconductor Corporation	3,929	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 50 V	50 V	10A	-55°C ~ 150°C	800 mV @ 10 A
SF68GHA0G DIODE GEN PURP 600V 6A DO201AD Taiwan Semiconductor Corporation	2,320	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	6A	-55°C ~ 150°C	1.7 V @ 6 A
HERAF804G C0G DIODE GEN PURP 300V 8A ITO220AC Taiwan Semiconductor Corporation	3,133	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 300 V	300 V	8A	-55°C ~ 150°C	1 V @ 8 A
1N5819HA0G DIODE SCHOTTKY 40V 1A DO204AL Taiwan Semiconductor Corporation	2,708	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	55pF @ 4V, 1MHz	-	1 mA @ 40 V	40 V	1A	-55°C ~ 125°C	600 mV @ 1 A
MBRF1050HC0G DIODE SCHOTTKY 50V 10A ITO220AC Taiwan Semiconductor Corporation	2,140	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 50 V	50 V	10A	-55°C ~ 150°C	800 mV @ 10 A
SFT11G A0G DIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation	2,455	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HERAF805G C0G DIODE GEN PURP 400V 8A ITO220AC Taiwan Semiconductor Corporation	2,552	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	8A	-55°C ~ 150°C	1.3 V @ 8 A
SS12HM2G DIODE SCHOTTKY 20V 1A DO214AC Taiwan Semiconductor Corporation	3,395	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	200 µA @ 20 V	20 V	1A	-55°C ~ 125°C	500 mV @ 1 A
BA157G A0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	3,318	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	150 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
MBRF1060 C0G DIODE SCHOTTKY 60V 10A ITO220AC Taiwan Semiconductor Corporation	2,405	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	100 µA @ 60 V	60 V	10A	-55°C ~ 150°C	800 mV @ 10 A
SFT11GHA0G DIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation	3,140	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HERAF806G C0G DIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation	3,487	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	60pF @ 4V, 1MHz	80 ns	10 µA @ 600 V	600 V	8A	-55°C ~ 150°C	1.7 V @ 8 A
SS12L M2G DIODE SCHOTTKY 20V 1A SUB SMA Taiwan Semiconductor Corporation	2,015	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 20 V	20 V	1A	-55°C ~ 125°C	450 mV @ 1 A
BA157GHA0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	3,613	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	150 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
MBRF1060HC0G DIODE SCHOTTKY 60V 10A ITO220AC Taiwan Semiconductor Corporation	2,020	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 60 V	60 V	10A	-55°C ~ 150°C	800 mV @ 10 A
SFT12G A0G DIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation	2,256	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	950 mV @ 1 A