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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MBRF1635HC0GDIODE SCHOTTKY 35V 16A ITO220AC Taiwan Semiconductor Corporation |
3,817 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 35 V | 35 V | 16A | -55°C ~ 150°C | 630 mV @ 16 A |
|
SFT16G A0GDIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation |
2,586 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
MBR1045 C0GDIODE GEN PURP 45V 10A TO220AC Taiwan Semiconductor Corporation |
3,706 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 45 V | 45 V | 10A | -55°C ~ 150°C | 700 mV @ 10 A | |
|
SS14L MHGDIODE SCHOTTKY 40V 1A SUB SMA Taiwan Semiconductor Corporation |
2,771 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | |
|
FR101G A0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
2,740 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
MBRF1645 C0GDIODE SCHOTTKY 45V 16A ITO220AC Taiwan Semiconductor Corporation |
3,385 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 45 V | 45 V | 16A | -55°C ~ 150°C | 630 mV @ 16 A | |
|
|
SFT16GHA0GDIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation |
3,373 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
MBR1045HC0GDIODE GEN PURP 45V 10A TO220AC Taiwan Semiconductor Corporation |
2,748 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 45 V | 45 V | 10A | -55°C ~ 150°C | 700 mV @ 10 A |
|
|
SS14LHM2GDIODE SCHOTTKY 40V 1A SUB SMA Taiwan Semiconductor Corporation |
3,622 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |
|
|
FR102G A0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,867 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
MBRF1645HC0GDIODE SCHOTTKY 45V 16A ITO220AC Taiwan Semiconductor Corporation |
2,467 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 45 V | 45 V | 16A | -55°C ~ 150°C | 630 mV @ 16 A |
|
|
SFT17G A0GDIODE GEN PURP 500V 1A TS-1 Taiwan Semiconductor Corporation |
2,280 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
MBR1050 C0GDIODE GEN PURP 50V 10A TO220AC Taiwan Semiconductor Corporation |
3,189 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 50 V | 50 V | 10A | -55°C ~ 150°C | 800 mV @ 10 A | |
|
|
SS14LHMHGDIODE SCHOTTKY 40V 1A SUB SMA Taiwan Semiconductor Corporation |
3,107 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |
|
|
FR106G A0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
3,968 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
MBRF1650 C0GDIODE SCHOTTKY 50V 16A ITO220AC Taiwan Semiconductor Corporation |
2,518 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 16A | -55°C ~ 150°C | 750 mV @ 16 A | |
|
|
SFT17GHA0GDIODE GEN PURP 500V 1A TS-1 Taiwan Semiconductor Corporation |
3,869 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
MBR1050HC0GDIODE GEN PURP 50V 10A TO220AC Taiwan Semiconductor Corporation |
3,292 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 50 V | 50 V | 10A | -55°C ~ 150°C | 800 mV @ 10 A |
|
SS15HM2GDIODE SCHOTTKY 50V 1A DO214AC Taiwan Semiconductor Corporation |
2,854 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 200 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 750 mV @ 1 A |
|
|
HER101G A0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
2,394 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
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