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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
MBR10200 C0G DIODE GEN PURP 200V 10A TO220AC Taiwan Semiconductor Corporation	2,893	-	RFQ	Ficha técnica	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	-	-	100 µA @ 200 V	200 V	10A	-55°C ~ 150°C	1.05 V @ 10 A
PU2BBH 25NS, 2A, 100V, ULTRA FAST RECOV Taiwan Semiconductor Corporation	2,984	-	RFQ		Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	33pF @ 4V, 1MHz	25 ns	2 µA @ 100 V	100 V	2A (DC)	-55°C ~ 175°C	930 mV @ 2 A
PU2DBH 25NS, 2A, 200V, ULTRA FAST RECOV Taiwan Semiconductor Corporation	2,097	-	RFQ		Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	33pF @ 4V, 1MHz	25 ns	2 µA @ 200 V	200 V	2A (DC)	-55°C ~ 175°C	930 mV @ 2 A
SS13L MHG DIODE SCHOTTKY 30V 1A SUB SMA Taiwan Semiconductor Corporation	2,411	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 30 V	30 V	1A	-55°C ~ 125°C	500 mV @ 1 A
BAT43 A0G DIODE SCHOTTKY 30V 200MA DO35 Taiwan Semiconductor Corporation	3,380	-	RFQ		Tape & Box (TB)		RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Obsolete	Through Hole	7pF @ 1V, 1MHz	5 ns	100 nA @ 25 V	30 V	200mA	-65°C ~ 125°C	450 mV @ 15 mA
MBRF16150 C0G DIODE SCHOTTKY 150V 16A ITO220AC Taiwan Semiconductor Corporation	3,663	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	100 µA @ 150 V	150 V	16A	-55°C ~ 150°C	950 mV @ 16 A
SFT14GHA0G DIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation	3,897	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	950 mV @ 1 A
MBR10200HC0G DIODE GEN PURP 200V 10A TO220AC Taiwan Semiconductor Corporation	2,953	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 200 V	200 V	10A	-55°C ~ 150°C	1.05 V @ 10 A
SS13LHM2G DIODE SCHOTTKY 30V 1A SUB SMA Taiwan Semiconductor Corporation	3,072	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 30 V	30 V	1A	-55°C ~ 125°C	500 mV @ 1 A
BAV19 A0G DIODE GEN PURP 100V 200MA DO35 Taiwan Semiconductor Corporation	2,504	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	5pF @ 0V, 1MHz	-	100 nA @ 100 V	100 V	200mA	-55°C ~ 175°C	1.25 V @ 200 mA
MBRF16150HC0G DIODE SCHOTTKY 150V 16A ITO220AC Taiwan Semiconductor Corporation	3,304	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	16A	-55°C ~ 150°C	950 mV @ 16 A
SFT15G A0G DIODE GEN PURP 300V 1A TS-1 Taiwan Semiconductor Corporation	3,132	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
MBR1035 C0G DIODE GEN PURP 35V 10A TO220AC Taiwan Semiconductor Corporation	2,632	-	RFQ	Ficha técnica	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 35 V	35 V	10A	-55°C ~ 150°C	700 mV @ 10 A
SS13LHMHG DIODE SCHOTTKY 30V 1A SUB SMA Taiwan Semiconductor Corporation	3,764	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 30 V	30 V	1A	-55°C ~ 125°C	500 mV @ 1 A
BAV20 A0G DIODE GEN PURP 150V 200MA DO35 Taiwan Semiconductor Corporation	2,924	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	5pF @ 0V, 1MHz	-	100 nA @ 150 V	150 V	200mA	-55°C ~ 175°C	1.25 V @ 200 mA
MBRF1635 C0G DIODE SCHOTTKY 35V 16A ITO220AC Taiwan Semiconductor Corporation	3,330	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 35 V	35 V	16A	-55°C ~ 150°C	630 mV @ 16 A
SFT15GHA0G DIODE GEN PURP 300V 1A TS-1 Taiwan Semiconductor Corporation	3,390	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
MBR1035HC0G DIODE GEN PURP 35V 10A TO220AC Taiwan Semiconductor Corporation	3,322	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 35 V	35 V	10A	-55°C ~ 150°C	700 mV @ 10 A
SS14L M2G DIODE SCHOTTKY 40V 1A SUB SMA Taiwan Semiconductor Corporation	2,438	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 40 V	40 V	1A	-55°C ~ 125°C	550 mV @ 1 A
BAV21 A0G DIODE GEN PURP 250V 200MA DO35 Taiwan Semiconductor Corporation	2,226	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	5pF @ 0V, 1MHz	-	100 nA @ 250 V	250 V	200mA	-55°C ~ 175°C	1.25 V @ 200 mA