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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S1ALHM2GDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
2,157 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
SF2L4G B0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
2,628 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
MUR860HC0GDIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation |
2,672 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 50 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 175°C | 1.7 V @ 8 A |
|
|
SS25LHMHGDIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation |
3,473 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A |
|
SR109 A0GDIODE SCHOTTKY 90V 1A DO204AL Taiwan Semiconductor Corporation |
3,349 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 850 mV @ 1 A | |
|
SR320HA0GDIODE SCHOTTKY 200V 3A DO201AD Taiwan Semiconductor Corporation |
2,327 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A |
|
|
S1ALHMHGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
3,589 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
|
SF2L4GHB0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
2,963 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
|
MUR8L60 C0GDIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation |
2,048 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 65 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 175°C | 1.3 V @ 8 A | |
|
|
SS26L M2GDIODE SCHOTTKY 60V 2A SUB SMA Taiwan Semiconductor Corporation |
3,353 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A | |
|
|
SR109HA0GDIODE SCHOTTKY 90V 1A DO204AL Taiwan Semiconductor Corporation |
2,620 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 850 mV @ 1 A |
|
|
SR502 A0GDIODE SCHOTTKY 20V 5A DO201AD Taiwan Semiconductor Corporation |
3,043 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 5A | -55°C ~ 125°C | 550 mV @ 5 A | |
|
S1BB M4GDIODE GEN PURP 100V 1A DO214AA Taiwan Semiconductor Corporation |
3,353 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 12pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
SF2L6G B0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
3,636 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
MUR8L60HC0GDIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation |
2,121 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 65 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 175°C | 1.3 V @ 8 A |
|
|
SS26L MHGDIODE SCHOTTKY 60V 2A SUB SMA Taiwan Semiconductor Corporation |
3,696 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A | |
|
|
SR110HA0GDIODE SCHOTTKY 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,117 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 850 mV @ 1 A |
|
|
SR502HA0GDIODE SCHOTTKY 50V 5A DO201AD Taiwan Semiconductor Corporation |
3,498 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 5A | -55°C ~ 125°C | 550 mV @ 5 A |
|
|
S1BL M2GDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
3,140 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N4006G R0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
2,912 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
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