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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
SF1001G C0G DIODE GEN PURP 50V 10A TO220AB Taiwan Semiconductor Corporation	3,698	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	10A	-55°C ~ 150°C	975 mV @ 5 A
SS29HM4G DIODE SCHOTTKY 90V 2A DO214AA Taiwan Semiconductor Corporation	3,329	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	100 µA @ 90 V	90 V	2A	-55°C ~ 150°C	850 mV @ 2 A
UF1AHA0G DIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation	3,549	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	1 V @ 1 A
SR505 A0G DIODE SCHOTTKY 50V 5A DO201AD Taiwan Semiconductor Corporation	3,760	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	5A	-55°C ~ 150°C	700 mV @ 5 A
S1DL M2G DIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation	2,154	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 200 V	200 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
SF31GHB0G DIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation	3,488	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SF1001GHC0G DIODE GEN PURP 50V 10A TO220AB Taiwan Semiconductor Corporation	2,976	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	10A	-55°C ~ 150°C	975 mV @ 5 A
SS29L M2G DIODE SCHOTTKY 90V 2A SUB SMA Taiwan Semiconductor Corporation	2,420	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 90 V	90 V	2A	-55°C ~ 150°C	850 mV @ 2 A
UF1B A0G DIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation	3,168	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	1 V @ 1 A
SR505HA0G DIODE SCHOTTKY 50V 5A DO201AD Taiwan Semiconductor Corporation	2,584	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	5A	-55°C ~ 150°C	700 mV @ 5 A
S1DL MHG DIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation	3,413	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 200 V	200 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
SF3004PT C0G DIODE GEN PURP 200V 30A TO247AD Taiwan Semiconductor Corporation	2,039	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	30A	-55°C ~ 150°C	950 mV @ 15 A
BAS19 RFG DIODE GEN PURP 100V 200MA SOT23 Taiwan Semiconductor Corporation	2,570	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	5pF @ 0V, 1MHz	50 ns	100 nA @ 100 V	100 V	200mA	-65°C ~ 150°C	1.25 V @ 200 mA
BAS20 RFG DIODE GEN PURP 150V 200MA SOT23 Taiwan Semiconductor Corporation	2,950	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	5pF @ 0V, 1MHz	50 ns	100 nA @ 150 V	150 V	200mA	-65°C ~ 150°C	1.25 V @ 200 mA
BAS21 RFG DIODE GEN PURP 250V 200MA SOT23 Taiwan Semiconductor Corporation	3,646	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	5pF @ 1V, 1MHz	50 ns	100 nA @ 200 V	250 V	200mA	-55°C ~ 150°C	1.25 V @ 200 mA
1N4004GHR0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	3,128	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	-	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1 V @ 1 A
SF32G B0G DIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation	3,312	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SF1002G C0G DIODE GEN PURP 100V 10A TO220AB Taiwan Semiconductor Corporation	2,324	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	10A	-55°C ~ 150°C	975 mV @ 5 A
SS29L MHG DIODE SCHOTTKY 90V 2A SUB SMA Taiwan Semiconductor Corporation	3,682	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 90 V	90 V	2A	-55°C ~ 150°C	850 mV @ 2 A
UF1BHA0G DIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation	3,439	-	RFQ	Ficha técnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	1 V @ 1 A