Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SF34G B0G

SF34G B0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation
2,448 -

RFQ

SF34G B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF1004G C0G

SF1004G C0G

DIODE GEN PURP 200V 10A TO220AB

Taiwan Semiconductor Corporation
3,036 -

RFQ

SF1004G C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 10A -55°C ~ 150°C 975 mV @ 5 A
SS310L MHG

SS310L MHG

DIODE SCHOTTKY 100V 3A SUB SMA

Taiwan Semiconductor Corporation
3,836 -

RFQ

SS310L MHG

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 3A -55°C ~ 150°C 850 mV @ 3 A
UF1GHA0G

UF1GHA0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation
2,070 -

RFQ

UF1GHA0G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
SR515HA0G

SR515HA0G

DIODE SCHOTTKY 150V 5A DO201AD

Taiwan Semiconductor Corporation
2,842 -

RFQ

SR515HA0G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 5A -55°C ~ 150°C 1.05 V @ 5 A
S1GLHM2G

S1GLHM2G

DIODE GEN PURP 400V 1A SUB SMA

Taiwan Semiconductor Corporation
2,002 -

RFQ

S1GLHM2G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 400 V 400 V 1A -55°C ~ 175°C 1.1 V @ 1 A
1N4005GHR0G

1N4005GHR0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation
3,496 -

RFQ

1N4005GHR0G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1 V @ 1 A
1N4006GHR0G

1N4006GHR0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation
2,849 -

RFQ

1N4006GHR0G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1 V @ 1 A
1N4007GHR0G

1N4007GHR0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation
2,825 -

RFQ

1N4007GHR0G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 1000 V 1000 V 1A -55°C ~ 150°C 1 V @ 1 A
S1DFS MXG

S1DFS MXG

DIODE, 1A, 200V, SOD-128

Taiwan Semiconductor Corporation
2,947 -

RFQ

S1DFS MXG

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz - 1 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.1 V @ 1 A
S1GFS MXG

S1GFS MXG

DIODE, 1A, 400V, SOD-128

Taiwan Semiconductor Corporation
3,121 -

RFQ

S1GFS MXG

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz - 1 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.1 V @ 1 A
S1JFS MXG

S1JFS MXG

DIODE, 1A, 600V, SOD-128

Taiwan Semiconductor Corporation
3,631 -

RFQ

S1JFS MXG

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz - 1 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.1 V @ 1 A
SF34GHB0G

SF34GHB0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation
3,482 -

RFQ

SF34GHB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF1004GHC0G

SF1004GHC0G

DIODE GEN PURP 200V 10A TO220AB

Taiwan Semiconductor Corporation
3,405 -

RFQ

SF1004GHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 10A -55°C ~ 150°C 975 mV @ 5 A
SS310LHM2G

SS310LHM2G

DIODE SCHOTTKY 100V 3A SUB SMA

Taiwan Semiconductor Corporation
2,579 -

RFQ

SS310LHM2G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 3A -55°C ~ 150°C 850 mV @ 3 A
SR520HA0G

SR520HA0G

DIODE SCHOTTKY 200V 5A DO201AD

Taiwan Semiconductor Corporation
2,678 -

RFQ

SR520HA0G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 200 V 200 V 5A -55°C ~ 150°C 1.05 V @ 5 A
S1GLHMHG

S1GLHMHG

DIODE GEN PURP 400V 1A SUB SMA

Taiwan Semiconductor Corporation
3,656 -

RFQ

S1GLHMHG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 400 V 400 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF35G B0G

SF35G B0G

DIODE GEN PURP 300V 3A DO201AD

Taiwan Semiconductor Corporation
2,244 -

RFQ

SF35G B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 3A -55°C ~ 150°C 1.3 V @ 3 A
SF1005GHC0G

SF1005GHC0G

DIODE GEN PURP 300V 10A TO220AB

Taiwan Semiconductor Corporation
2,252 -

RFQ

SF1005GHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 10A -55°C ~ 150°C 1.3 V @ 5 A
SS310LHMHG

SS310LHMHG

DIODE SCHOTTKY 100V 3A SUB SMA

Taiwan Semiconductor Corporation
2,527 -

RFQ

SS310LHMHG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 3A -55°C ~ 150°C 850 mV @ 3 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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