Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
S1KLHM2G

S1KLHM2G

DIODE GEN PURP 800V 1A SUB SMA

Taiwan Semiconductor Corporation
3,463 -

RFQ

S1KLHM2G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 800 V 800 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF38G B0G

SF38G B0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation
3,377 -

RFQ

SF38G B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 60pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.7 V @ 3 A
SFAF1005G C0G

SFAF1005G C0G

DIODE GEN PURP 300V 10A ITO220AC

Taiwan Semiconductor Corporation
2,494 -

RFQ

SFAF1005G C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 140pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 10A -55°C ~ 150°C 1.3 V @ 10 A
SF1601GHC0G

SF1601GHC0G

DIODE GEN PURP 50V 16A TO220AB

Taiwan Semiconductor Corporation
2,339 -

RFQ

SF1601GHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 16A -55°C ~ 150°C 975 mV @ 8 A
SS36L MHG

SS36L MHG

DIODE SCHOTTKY 60V 3A SUB SMA

Taiwan Semiconductor Corporation
2,215 -

RFQ

SS36L MHG

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 60 V 60 V 3A -55°C ~ 150°C 750 mV @ 3 A
SR805 A0G

SR805 A0G

DIODE SCHOTTKY 50V 8A DO201AD

Taiwan Semiconductor Corporation
2,056 -

RFQ

SR805 A0G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 8A -55°C ~ 150°C 700 mV @ 8 A
S1KLHMHG

S1KLHMHG

DIODE GEN PURP 800V 1A SUB SMA

Taiwan Semiconductor Corporation
3,636 -

RFQ

S1KLHMHG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 800 V 800 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF38GHB0G

SF38GHB0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation
2,013 -

RFQ

SF38GHB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.7 V @ 3 A
SFAF1005GHC0G

SFAF1005GHC0G

DIODE GEN PURP 300V 10A ITO220AC

Taiwan Semiconductor Corporation
3,156 -

RFQ

SFAF1005GHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 140pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 10A -55°C ~ 150°C 1.3 V @ 10 A
SF1601PT C0G

SF1601PT C0G

DIODE GEN PURP 50V 16A TO247AD

Taiwan Semiconductor Corporation
3,740 -

RFQ

SF1601PT C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 85pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 16A -55°C ~ 150°C 950 mV @ 8 A
SS36LHM2G

SS36LHM2G

DIODE SCHOTTKY 60V 3A SUB SMA

Taiwan Semiconductor Corporation
3,234 -

RFQ

SS36LHM2G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 60 V 60 V 3A -55°C ~ 150°C 750 mV @ 3 A
SR805HA0G

SR805HA0G

DIODE SCHOTTKY 50V 8A DO201AD

Taiwan Semiconductor Corporation
2,950 -

RFQ

SR805HA0G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 8A -55°C ~ 150°C 700 mV @ 8 A
S1ML MHG

S1ML MHG

DIODE GEN PURP 1000V 1A SUB SMA

Taiwan Semiconductor Corporation
3,049 -

RFQ

S1ML MHG

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 1000 V - 1A -55°C ~ 175°C 1.1 V @ 1 A
SF41G B0G

SF41G B0G

DIODE GEN PURP 50V 4A DO201AD

Taiwan Semiconductor Corporation
2,392 -

RFQ

SF41G B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 4A -55°C ~ 150°C 1 V @ 4 A
SFAF1006G C0G

SFAF1006G C0G

DIODE GEN PURP 400V 10A ITO220AC

Taiwan Semiconductor Corporation
2,816 -

RFQ

SFAF1006G C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 140pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 10A -55°C ~ 150°C 1.3 V @ 10 A
SF1601PTHC0G

SF1601PTHC0G

DIODE GEN PURP 50V 16A TO247AD

Taiwan Semiconductor Corporation
2,901 -

RFQ

SF1601PTHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 85pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 16A -55°C ~ 150°C 950 mV @ 8 A
SS36LHMHG

SS36LHMHG

DIODE SCHOTTKY 60V 3A SUB SMA

Taiwan Semiconductor Corporation
2,058 -

RFQ

SS36LHMHG

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 60 V 60 V 3A -55°C ~ 150°C 750 mV @ 3 A
SR806HA0G

SR806HA0G

DIODE SCHOTTKY 60V 8A DO201AD

Taiwan Semiconductor Corporation
3,586 -

RFQ

SR806HA0G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 8A -55°C ~ 150°C 700 mV @ 8 A
S1MLHM2G

S1MLHM2G

DIODE GEN PURP 1000V 1A SUB SMA

Taiwan Semiconductor Corporation
3,755 -

RFQ

S1MLHM2G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 1000 V - 1A -55°C ~ 175°C 1.1 V @ 1 A
SF41GHB0G

SF41GHB0G

DIODE GEN PURP 50V 4A DO201AD

Taiwan Semiconductor Corporation
2,019 -

RFQ

SF41GHB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 4A -55°C ~ 150°C 1 V @ 4 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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