Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SR810HA0G

SR810HA0G

DIODE SCHOTTKY 100V 8A DO201AD

Taiwan Semiconductor Corporation
2,718 -

RFQ

SR810HA0G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 8A -55°C ~ 150°C 920 mV @ 8 A
S2AHM4G

S2AHM4G

DIODE GEN PURP 50V 2A DO214AA

Taiwan Semiconductor Corporation
2,240 -

RFQ

S2AHM4G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 1.5 µs 1 µA @ 50 V 50 V 2A -55°C ~ 150°C 1.15 V @ 2 A
SF43GHB0G

SF43GHB0G

DIODE GEN PURP 150V 4A DO201AD

Taiwan Semiconductor Corporation
3,046 -

RFQ

SF43GHB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 4A -55°C ~ 150°C 1 V @ 4 A
SFAF1601G C0G

SFAF1601G C0G

DIODE GEN PURP 50V 16A ITO220AC

Taiwan Semiconductor Corporation
2,512 -

RFQ

SFAF1601G C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 130pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 16A -55°C ~ 150°C 975 mV @ 16 A
TSSA5U60 M2G

TSSA5U60 M2G

DIODE SCHOTTKY 60V 5A DO214AC

Taiwan Semiconductor Corporation
3,422 -

RFQ

TSSA5U60 M2G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 300 µA @ 60 V 60 V 5A -55°C ~ 150°C 560 mV @ 5 A
SR815 A0G

SR815 A0G

DIODE SCHOTTKY 150V 8A DO201AD

Taiwan Semiconductor Corporation
3,572 -

RFQ

SR815 A0G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 8A -55°C ~ 150°C 1.02 V @ 8 A
S2B M4G

S2B M4G

DIODE GEN PURP 100V 2A DO214AA

Taiwan Semiconductor Corporation
3,595 -

RFQ

S2B M4G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 1.5 µs 1 µA @ 100 V 100 V 2A -55°C ~ 150°C 1.15 V @ 2 A
SF44G B0G

SF44G B0G

DIODE GEN PURP 200V 4A DO201AD

Taiwan Semiconductor Corporation
3,258 -

RFQ

SF44G B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 4A -55°C ~ 150°C 1 V @ 4 A
SFAF1601GHC0G

SFAF1601GHC0G

DIODE GEN PURP 50V 16A ITO220AC

Taiwan Semiconductor Corporation
3,504 -

RFQ

SFAF1601GHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 130pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 16A -55°C ~ 150°C 975 mV @ 16 A
US1A M2G

US1A M2G

DIODE GEN PURP 50V 1A DO214AC

Taiwan Semiconductor Corporation
3,746 -

RFQ

US1A M2G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 15pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
SR815HA0G

SR815HA0G

DIODE SCHOTTKY 150V 8A DO201AD

Taiwan Semiconductor Corporation
2,217 -

RFQ

SR815HA0G

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 8A -55°C ~ 150°C 1.02 V @ 8 A
S2BHM4G

S2BHM4G

DIODE GEN PURP 100V 2A DO214AA

Taiwan Semiconductor Corporation
3,849 -

RFQ

S2BHM4G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 1.5 µs 1 µA @ 100 V 100 V 2A -55°C ~ 150°C 1.15 V @ 2 A
SF44GHB0G

SF44GHB0G

DIODE GEN PURP 200V 4A DO201AD

Taiwan Semiconductor Corporation
2,595 -

RFQ

SF44GHB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 4A -55°C ~ 150°C 1 V @ 4 A
SFAF1602G C0G

SFAF1602G C0G

DIODE GEN PURP 100V 16A ITO220AC

Taiwan Semiconductor Corporation
3,426 -

RFQ

SFAF1602G C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 130pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 16A -55°C ~ 150°C 975 mV @ 16 A
US1AHM2G

US1AHM2G

DIODE GEN PURP 50V 1A DO214AC

Taiwan Semiconductor Corporation
3,346 -

RFQ

US1AHM2G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 15pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
SRT110 A0G

SRT110 A0G

DIODE SCHOTTKY 100V 1A TS-1

Taiwan Semiconductor Corporation
2,453 -

RFQ

SRT110 A0G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 1A -55°C ~ 150°C 800 mV @ 1 A
S3AB M4G

S3AB M4G

DIODE GEN PURP 50V 3A DO214AA

Taiwan Semiconductor Corporation
2,226 -

RFQ

S3AB M4G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 40pF @ 4V, 1MHz 1.5 µs 10 µA @ 50 V 50 V 3A -55°C ~ 150°C 1.15 V @ 3 A
SF45G B0G

SF45G B0G

DIODE GEN PURP 300V 4A DO201AD

Taiwan Semiconductor Corporation
3,770 -

RFQ

SF45G B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 4A -55°C ~ 150°C 1.3 V @ 4 A
SR109HB0G

SR109HB0G

DIODE SCHOTTKY 90V 1A DO204AL

Taiwan Semiconductor Corporation
2,175 -

RFQ

SR109HB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 90 V 90 V 1A -55°C ~ 150°C 850 mV @ 1 A
SFAF1602GHC0G

SFAF1602GHC0G

DIODE GEN PURP 100V 16A ITO220AC

Taiwan Semiconductor Corporation
3,562 -

RFQ

SFAF1602GHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 130pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 16A -55°C ~ 150°C 975 mV @ 16 A
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1800+ Fabricantes em todo o mundo
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15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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