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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
ES3CHM6G DIODE GEN PURP 150V 3A DO214AB Taiwan Semiconductor Corporation	3,942	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	45pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SK19B M4G DIODE SCHOTTKY 90V 1A DO214AA Taiwan Semiconductor Corporation	2,584	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	100 µA @ 90 V	90 V	1A	-55°C ~ 150°C	850 mV @ 3 A
SF61G B0G DIODE GEN PURP 50V 6A DO201AD Taiwan Semiconductor Corporation	3,097	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	6A	-55°C ~ 150°C	975 mV @ 6 A
SFAF1606GHC0G DIODE GEN PURP 400V 16A ITO220AC Taiwan Semiconductor Corporation	3,731	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	100pF @ 4V, 1MHz	35 ns	10 µA @ 400 V	400 V	16A	-55°C ~ 150°C	1.3 V @ 16 A
FR152G B0G DIODE GEN PURP 100V 1.5A DO204AC Taiwan Semiconductor Corporation	3,367	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	150 ns	5 µA @ 100 V	100 V	1.5A	-55°C ~ 150°C	1.3 V @ 1.5 A
SR1203HB0G DIODE SCHOTTKY 30V 12A DO201AD Taiwan Semiconductor Corporation	3,639	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 30 V	30 V	12A	-50°C ~ 150°C	550 mV @ 12 A
ES3D M6G DIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation	2,094	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	45pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SK19BHM4G DIODE SCHOTTKY 90V 1A DO214AA Taiwan Semiconductor Corporation	3,554	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	100 µA @ 90 V	90 V	1A	-55°C ~ 150°C	850 mV @ 3 A
SF61GHB0G DIODE GEN PURP 50V 6A DO201AD Taiwan Semiconductor Corporation	3,487	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	6A	-55°C ~ 150°C	975 mV @ 6 A
BAS20W RVG DIODE GEN PURP 150V 200MA SOT323 Taiwan Semiconductor Corporation	2,840	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	5pF @ 0V, 1MHz	50 ns	100 nA @ 150 V	150 V	200mA	-55°C ~ 150°C	1.25 V @ 100 mA
BAS21W RVG DIODE GEN PURP 250V 200MA SOT323 Taiwan Semiconductor Corporation	2,257	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	5pF @ 0V, 1MHz	50 ns	100 nA @ 250 V	250 V	200mA	-55°C ~ 150°C	1.25 V @ 100 mA
SFAF1607G C0G DIODE GEN PURP 500V 16A ITO220AC Taiwan Semiconductor Corporation	2,774	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	16A	-55°C ~ 150°C	1.7 V @ 16 A
FR152GHB0G DIODE GEN PURP 100V 1.5A DO204AC Taiwan Semiconductor Corporation	3,408	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	150 ns	5 µA @ 100 V	100 V	1.5A	-55°C ~ 150°C	1.3 V @ 1.5 A
SR1204 B0G DIODE SCHOTTKY 40V 12A DO201AD Taiwan Semiconductor Corporation	2,719	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 40 V	40 V	12A	-50°C ~ 150°C	550 mV @ 12 A
ES3DHM6G DIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation	3,369	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	45pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SK22A M2G DIODE SCHOTTKY 20V 2A DO214AC Taiwan Semiconductor Corporation	2,687	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	500 µA @ 20 V	20 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SF62G B0G DIODE GEN PURP 100V 6A DO201AD Taiwan Semiconductor Corporation	3,329	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	6A	-55°C ~ 150°C	975 mV @ 6 A
SFAF1607GHC0G DIODE GEN PURP 500V 16A ITO220AC Taiwan Semiconductor Corporation	2,586	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	16A	-55°C ~ 150°C	1.7 V @ 16 A
FR153G B0G DIODE GEN PURP 200V 1.5A DO204AC Taiwan Semiconductor Corporation	2,944	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	150 ns	5 µA @ 200 V	200 V	1.5A	-55°C ~ 150°C	1.3 V @ 1.5 A
SR1204HB0G DIODE SCHOTTKY 40V 12A DO201AD Taiwan Semiconductor Corporation	2,958	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 40 V	40 V	12A	-50°C ~ 150°C	550 mV @ 12 A