Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SK12B M4G

SK12B M4G

DIODE SCHOTTKY 20V 1A DO214AA

Taiwan Semiconductor Corporation
2,586 -

RFQ

SK12B M4G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 1A -55°C ~ 125°C 500 mV @ 1 A
SF47G B0G

SF47G B0G

DIODE GEN PURP 500V 4A DO201AD

Taiwan Semiconductor Corporation
3,659 -

RFQ

SF47G B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 500 V 500 V 4A -55°C ~ 150°C 1.7 V @ 4 A
SFAF1604GHC0G

SFAF1604GHC0G

DIODE GEN PURP 200V 16A ITO220AC

Taiwan Semiconductor Corporation
2,535 -

RFQ

SFAF1604GHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 130pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 16A -55°C ~ 150°C 975 mV @ 16 A
SR115HB0G

SR115HB0G

DIODE SCHOTTKY 150V 1A DO204AL

Taiwan Semiconductor Corporation
3,700 -

RFQ

SR115HB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 1A -55°C ~ 150°C 950 mV @ 1 A
ES3B M6G

ES3B M6G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation
2,896 -

RFQ

ES3B M6G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C 950 mV @ 3 A
SK12BHM4G

SK12BHM4G

DIODE SCHOTTKY 20V 1A DO214AA

Taiwan Semiconductor Corporation
3,378 -

RFQ

SK12BHM4G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 1A -55°C ~ 125°C 500 mV @ 1 A
SF47GHB0G

SF47GHB0G

DIODE GEN PURP 500V 4A DO201AD

Taiwan Semiconductor Corporation
2,202 -

RFQ

SF47GHB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 500 V 500 V 4A -55°C ~ 150°C 1.7 V @ 4 A
SFAF1605G C0G

SFAF1605G C0G

DIODE GEN PURP 300V 16A ITO220AC

Taiwan Semiconductor Corporation
2,878 -

RFQ

SFAF1605G C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 16A -55°C ~ 150°C 1.3 V @ 16 A
SR1202 B0G

SR1202 B0G

DIODE SCHOTTKY 20V 12A DO201AD

Taiwan Semiconductor Corporation
3,785 -

RFQ

SR1202 B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 20 V 20 V 12A -50°C ~ 150°C 550 mV @ 12 A
ES3BHM6G

ES3BHM6G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation
2,288 -

RFQ

ES3BHM6G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C 950 mV @ 3 A
SK15B M4G

SK15B M4G

DIODE SCHOTTKY 50V 1A DO214AA

Taiwan Semiconductor Corporation
2,084 -

RFQ

SK15B M4G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 50 V 50 V 1A -55°C ~ 150°C 750 mV @ 1 A
SF48G B0G

SF48G B0G

DIODE GEN PURP 600V 4A DO201AD

Taiwan Semiconductor Corporation
3,558 -

RFQ

SF48G B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 4A -55°C ~ 150°C 1.7 V @ 4 A
SFAF1605GHC0G

SFAF1605GHC0G

DIODE GEN PURP 300V 16A ITO220AC

Taiwan Semiconductor Corporation
3,538 -

RFQ

SFAF1605GHC0G

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 16A -55°C ~ 150°C 1.3 V @ 16 A
SR1202HB0G

SR1202HB0G

DIODE SCHOTTKY 20V 12A DO201AD

Taiwan Semiconductor Corporation
3,014 -

RFQ

SR1202HB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 20 V 20 V 12A -50°C ~ 150°C 550 mV @ 12 A
ES3C M6G

ES3C M6G

DIODE GEN PURP 150V 3A DO214AB

Taiwan Semiconductor Corporation
2,457 -

RFQ

ES3C M6G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 3A -55°C ~ 150°C 950 mV @ 3 A
SK15BHM4G

SK15BHM4G

DIODE SCHOTTKY 50V 1A DO214AA

Taiwan Semiconductor Corporation
3,244 -

RFQ

SK15BHM4G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 50 V 50 V 1A -55°C ~ 150°C 750 mV @ 1 A
SF48GHB0G

SF48GHB0G

DIODE GEN PURP 600V 4A DO201AD

Taiwan Semiconductor Corporation
2,847 -

RFQ

SF48GHB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 4A -55°C ~ 150°C 1.7 V @ 4 A
SFAF1606G C0G

SFAF1606G C0G

DIODE GEN PURP 400V 16A ITO220AC

Taiwan Semiconductor Corporation
2,504 -

RFQ

SFAF1606G C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 100pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 16A -55°C ~ 150°C 1.3 V @ 16 A
FR151GHB0G

FR151GHB0G

DIODE GEN PURP 50V 1.5A DO204AC

Taiwan Semiconductor Corporation
3,977 -

RFQ

FR151GHB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SR1203 B0G

SR1203 B0G

DIODE SCHOTTKY 30V 12A DO201AD

Taiwan Semiconductor Corporation
2,375 -

RFQ

SR1203 B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 12A -50°C ~ 150°C 550 mV @ 12 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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