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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
SR306HB0G DIODE SCHOTTKY 60V 3A DO201AD Taiwan Semiconductor Corporation	2,246	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 60 V	60 V	3A	-55°C ~ 150°C	700 mV @ 3 A
SFAF801GHC0G DIODE GEN PURP 50V 8A ITO220AC Taiwan Semiconductor Corporation	3,390	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	90pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	8A	-55°C ~ 150°C	950 mV @ 8 A
SR103HB0G DIODE SCHOTTKY 30V 1A DO204AL Taiwan Semiconductor Corporation	2,212	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	500 µA @ 30 V	30 V	1A	-55°C ~ 125°C	550 mV @ 1 A
BAV103 L1G DIODE GP 250V 200MA MINIMELF Taiwan Semiconductor Corporation	2,892	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	4pF @ 0V, 1MHz	-	100 nA @ 200 V	250 V	200mA	-65°C ~ 200°C	1 V @ 100 mA
HER154G B0G DIODE GEN PURP 300V 1.5A DO204AC Taiwan Semiconductor Corporation	3,823	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	35pF @ 4V, 1MHz	50 ns	5 µA @ 300 V	300 V	1.5A	-55°C ~ 150°C	1 V @ 1.5 A
SS22L MQG DIODE SCHOTTKY 20V 2A SUB SMA Taiwan Semiconductor Corporation	2,437	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 20 V	20 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR309 B0G DIODE SCHOTTKY 90V 3A DO201AD Taiwan Semiconductor Corporation	2,717	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	100 µA @ 90 V	90 V	3A	-55°C ~ 150°C	850 mV @ 3 A
SFAF802G C0G DIODE GEN PURP 100V 8A ITO220AC Taiwan Semiconductor Corporation	2,272	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	90pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	8A	-55°C ~ 150°C	950 mV @ 8 A
SR104 B0G DIODE SCHOTTKY 40V 1A DO204AL Taiwan Semiconductor Corporation	3,211	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 40 V	40 V	1A	-55°C ~ 125°C	550 mV @ 1 A
BYG23M R3G DIODE GEN PURP 1.5A DO214AC Taiwan Semiconductor Corporation	3,240	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	15pF @ 4V, 1MHz	65 ns	1 µA @ 1000 V	-	1.5A	-55°C ~ 150°C	1.7 V @ 1.5 A
HER155G B0G DIODE GEN PURP 400V 1.5A DO204AC Taiwan Semiconductor Corporation	2,566	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	35pF @ 4V, 1MHz	50 ns	5 µA @ 400 V	400 V	1.5A	-55°C ~ 150°C	1 V @ 1.5 A
SS22L MTG DIODE SCHOTTKY 20V 2A SUB SMA Taiwan Semiconductor Corporation	3,109	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 20 V	20 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR309HB0G DIODE SCHOTTKY 90V 3A DO201AD Taiwan Semiconductor Corporation	3,849	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 90 V	90 V	3A	-55°C ~ 150°C	850 mV @ 3 A
SFAF802GHC0G DIODE GEN PURP 100V 8A ITO220AC Taiwan Semiconductor Corporation	3,917	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	90pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	8A	-55°C ~ 150°C	950 mV @ 8 A
SR104HB0G DIODE SCHOTTKY 40V 1A DO204AL Taiwan Semiconductor Corporation	2,039	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 40 V	40 V	1A	-55°C ~ 125°C	550 mV @ 1 A
ES1A R3G DIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation	2,442	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	16pF @ 1V, 1MHz	35 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HER156G B0G DIODE GEN PURP 600V 1.5A DO204AC Taiwan Semiconductor Corporation	2,092	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	75 ns	5 µA @ 600 V	600 V	1.5A	-55°C ~ 150°C	1 V @ 1.5 A
SS22L RQG DIODE SCHOTTKY 20V 2A SUB SMA Taiwan Semiconductor Corporation	3,137	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 20 V	20 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR310 B0G DIODE SCHOTTKY 100V 3A DO201AD Taiwan Semiconductor Corporation	3,408	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	100 µA @ 100 V	100 V	3A	-55°C ~ 150°C	850 mV @ 3 A
SFAF803G C0G DIODE GEN PURP 150V 8A ITO220AC Taiwan Semiconductor Corporation	3,627	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	90pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	8A	-55°C ~ 150°C	950 mV @ 8 A