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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
SR105 B0G DIODE SCHOTTKY 50V 1A DO204AL Taiwan Semiconductor Corporation	3,912	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	1A	-55°C ~ 150°C	700 mV @ 1 A
ES1AHR3G DIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation	2,680	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	16pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HER157G B0G DIODE GEN PURP 800V 1.5A DO204AC Taiwan Semiconductor Corporation	3,664	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	75 ns	5 µA @ 800 V	800 V	1.5A	-55°C ~ 150°C	1 V @ 1.5 A
SS22L RTG DIODE SCHOTTKY 20V 2A SUB SMA Taiwan Semiconductor Corporation	2,280	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 20 V	20 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR310HB0G DIODE SCHOTTKY 100V 3A DO201AD Taiwan Semiconductor Corporation	2,407	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 100 V	100 V	3A	-55°C ~ 150°C	850 mV @ 3 A
SFAF803GHC0G DIODE GEN PURP 150V 8A ITO220AC Taiwan Semiconductor Corporation	3,194	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	90pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	8A	-55°C ~ 150°C	950 mV @ 8 A
SR105HB0G DIODE SCHOTTKY 50V 1A DO204AL Taiwan Semiconductor Corporation	2,750	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 50 V	50 V	1A	-55°C ~ 150°C	700 mV @ 1 A
ES1AL R3G DIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation	2,169	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	10pF @ 1V, 1MHz	35 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	950 mV @ 1 A
S1B M2G DIODE GEN PURP 100V 1A DO214AC Taiwan Semiconductor Corporation	2,385	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	12pF @ 4V, 1MHz	1.5 µs	1 µA @ 100 V	100 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
HER158G B0G DIODE GEN PURP 1.5A DO204AC Taiwan Semiconductor Corporation	2,592	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	75 ns	5 µA @ 1000 V	-	1.5A	-55°C ~ 150°C	1 V @ 1.5 A
SS22LHMQG DIODE SCHOTTKY 20V 2A SUB SMA Taiwan Semiconductor Corporation	2,456	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 20 V	20 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR315 B0G DIODE SCHOTTKY 150V 3A DO201AD Taiwan Semiconductor Corporation	2,502	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	3A	-55°C ~ 150°C	850 mV @ 3 A
SFAF804G C0G DIODE GEN PURP 200V 8A ITO220AC Taiwan Semiconductor Corporation	3,142	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	90pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	8A	-55°C ~ 150°C	950 mV @ 8 A
SR106 B0G DIODE SCHOTTKY 60V 1A DO204AL Taiwan Semiconductor Corporation	2,205	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 60 V	60 V	1A	-55°C ~ 150°C	700 mV @ 1 A
ES1AL RFG DIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation	3,599	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	10pF @ 1V, 1MHz	35 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HER201G B0G DIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation	3,382	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	35pF @ 4V, 1MHz	50 ns	5 µA @ 50 V	50 V	2A	-55°C ~ 150°C	1 V @ 2 A
SS22LHMTG DIODE SCHOTTKY 20V 2A SUB SMA Taiwan Semiconductor Corporation	2,110	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 20 V	20 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR315HB0G DIODE SCHOTTKY 150V 3A DO201AD Taiwan Semiconductor Corporation	2,407	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	3A	-55°C ~ 150°C	850 mV @ 3 A
SFAF804GHC0G DIODE GEN PURP 200V 8A ITO220AC Taiwan Semiconductor Corporation	3,702	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	90pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	8A	-55°C ~ 150°C	950 mV @ 8 A
SR106HB0G DIODE SCHOTTKY 60V 1A DO204AL Taiwan Semiconductor Corporation	3,292	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 60 V	60 V	1A	-55°C ~ 150°C	700 mV @ 1 A