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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SR504 B0GDIODE SCHOTTKY 40V 5A DO201AD Taiwan Semiconductor Corporation |
2,813 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 40 V | 40 V | 5A | -55°C ~ 125°C | 550 mV @ 5 A | |
|
SFF1001G C0GDIODE GEN PURP 50V 10A ITO220AB Taiwan Semiconductor Corporation |
3,996 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 10A | -55°C ~ 150°C | 975 mV @ 5 A | |
|
ES1CL RFGDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
3,725 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HER301G B0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
3,995 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
SS23LHMTGDIODE SCHOTTKY 30V 2A SUB SMA Taiwan Semiconductor Corporation |
2,799 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 30 V | 30 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A |
|
|
SR504HB0GDIODE SCHOTTKY 40V 5A DO201AD Taiwan Semiconductor Corporation |
2,013 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 5A | -55°C ~ 125°C | 550 mV @ 5 A |
|
|
SFF1001GA C0GDIODE GEN PURP 50V 10A ITO220AB Taiwan Semiconductor Corporation |
3,667 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 10A | -55°C ~ 150°C | 975 mV @ 5 A | |
|
|
ES1CLHR3GDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
2,483 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
HER302G B0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
3,526 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
SS23LHRQGDIODE SCHOTTKY 30V 2A SUB SMA Taiwan Semiconductor Corporation |
2,179 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 30 V | 30 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A |
|
1N5398G R0GDIODE GEN PURP 800V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,900 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
|
1N5399G R0GDIODE GEN PURP 1.5A DO204AC Taiwan Semiconductor Corporation |
3,395 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
RS2DA M2GDIODE GEN PURP 200V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,599 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
RS2GA M2GDIODE GEN PURP 400V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,925 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
RS2JA M2GDIODE GEN PURP 600V 1.5A DO214AC Taiwan Semiconductor Corporation |
2,782 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
RS2KA M2GDIODE GEN PURP 800V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,328 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
RS2MA M2GDIODE GEN PURP 1.5A DO214AC Taiwan Semiconductor Corporation |
3,207 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
SS110HM2GDIODE SCHOTTKY 100V 1A DO214AC Taiwan Semiconductor Corporation |
3,389 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A |
|
|
SS13HM2GDIODE SCHOTTKY 30V 1A DO214AC Taiwan Semiconductor Corporation |
3,644 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A |
|
|
SS14HM2GDIODE SCHOTTKY 40V 1A DO214AC Taiwan Semiconductor Corporation |
2,620 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A |
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