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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
US1M M2GDIODE GEN PURP 1A DO214AC Taiwan Semiconductor Corporation |
2,075 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
1N5817 A0GDIODE SCHOTTKY 20V 1A DO204AL Taiwan Semiconductor Corporation |
2,020 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 55pF @ 4V, 1MHz | - | 1 mA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 450 mV @ 1 A | |
|
2A06G R0GDIODE GEN PURP 800V 2A DO204AC Taiwan Semiconductor Corporation |
3,461 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
B0530W RHGDIODE SCHOTTKY 30V 500MA SOD123 Taiwan Semiconductor Corporation |
2,821 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 170pF @ 0V, 1MHz | - | 130 µA @ 30 V | 30 V | 500mA | -55°C ~ 125°C | 430 mV @ 500 mA | |
|
|
2A07G R0GDIODE GEN PURP 2A DO204AC Taiwan Semiconductor Corporation |
3,398 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
|
B0520LW RHGDIODE SCHOTTKY 14V 500MA SOD123 Taiwan Semiconductor Corporation |
3,642 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 170pF @ 0V, 1MHz | - | 250 µA @ 20 V | 14 V | 500mA | -55°C ~ 125°C | 385 mV @ 500 mA | |
|
|
SR004 R0GDIODE SCHOTTKY 40V 500MA DO204AL Taiwan Semiconductor Corporation |
2,676 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 110pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 500mA | -55°C ~ 125°C | 550 mV @ 500 mA | |
|
|
SR006 R0GDIODE SCHOTTKY 60V 500MA DO204AL Taiwan Semiconductor Corporation |
3,465 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 80pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 500mA | -55°C ~ 150°C | 700 mV @ 500 mA | |
|
|
SR106 R0GDIODE SCHOTTKY 60V 1A DO204AL Taiwan Semiconductor Corporation |
2,938 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
|
F1T6GHR0GDIODE GEN PURP 800V 1A TS-1 Taiwan Semiconductor Corporation |
3,389 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
F1T7GHR0GDIODE GEN PURP 1A TS-1 Taiwan Semiconductor Corporation |
3,224 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
LL4002G L0GDIODE GEN PURP 100V 1A MELF Taiwan Semiconductor Corporation |
3,800 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A (DC) | -65°C ~ 150°C | 1.1 V @ 1 A | |
|
|
LL4003G L0GDIODE GEN PURP 200V 1A MELF Taiwan Semiconductor Corporation |
2,361 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1A (DC) | -65°C ~ 150°C | 1.1 V @ 1 A | |
|
PU3BCH25NS, 3A, 100V, ULTRA FAST RECOV Taiwan Semiconductor Corporation |
3,163 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 47pF @ 4V, 1MHz | 25 ns | 2 µA @ 100 V | 100 V | 3A (DC) | -55°C ~ 175°C | 930 mV @ 3 A | |
|
|
LL4001G L0GDIODE GEN PURP 50V 1A MELF Taiwan Semiconductor Corporation |
3,806 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1A (DC) | -65°C ~ 150°C | 1.1 V @ 1 A | |
|
|
PU3DBH25NS, 3A, 200V, ULTRA FAST RECOV Taiwan Semiconductor Corporation |
2,006 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 47pF @ 4V, 1MHz | 25 ns | 2 µA @ 200 V | 200 V | 3A (DC) | -55°C ~ 175°C | 930 mV @ 3 A | |
|
|
PU3DCH25NS, 3A, 200V, ULTRA FAST RECOV Taiwan Semiconductor Corporation |
2,609 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 47pF @ 4V, 1MHz | 25 ns | 2 µA @ 200 V | 200 V | 3A (DC) | -55°C ~ 175°C | 930 mV @ 3 A | |
|
|
PU3BBH25NS, 3A, 100V, ULTRA FAST RECOV Taiwan Semiconductor Corporation |
3,040 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 47pF @ 4V, 1MHz | 25 ns | 2 µA @ 100 V | 100 V | 3A (DC) | -55°C ~ 175°C | 930 mV @ 3 A | |
|
S1DB M4GDIODE GEN PURP 200V 1A DO214AA Taiwan Semiconductor Corporation |
2,354 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
S1GB M4GDIODE GEN PURP 400V 1A DO214AA Taiwan Semiconductor Corporation |
2,301 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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