Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
TST10H100CW C0G

TST10H100CW C0G

DIODE SCHOTTKY 100V 5A TO220AB

Taiwan Semiconductor Corporation
3,504 -

RFQ

TST10H100CW C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 5A -55°C ~ 150°C 700 mV @ 5 A
TST10H120CW C0G

TST10H120CW C0G

DIODE SCHOTTKY 120V 5A TO220AB

Taiwan Semiconductor Corporation
2,774 -

RFQ

TST10H120CW C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 120 V 120 V 5A -55°C ~ 150°C 790 mV @ 5 A
SRAS20150 MNG

SRAS20150 MNG

DIODE SCHOTTKY 150V 20A TO263AB

Taiwan Semiconductor Corporation
3,587 -

RFQ

SRAS20150 MNG

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 150 V 150 V 20A -55°C ~ 150°C 1.02 V @ 20 A
TSF20H100C-S C0G

TSF20H100C-S C0G

DIODE SCHOTTKY 100V 10A ITO220AB

Taiwan Semiconductor Corporation
3,136 -

RFQ

TSF20H100C-S C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 150 µA @ 100 V 100 V 10A -55°C ~ 150°C 790 mV @ 10 A
TSF20H120C-S C0G

TSF20H120C-S C0G

DIODE SCHOTTKY 120V 10A ITO220AB

Taiwan Semiconductor Corporation
2,649 -

RFQ

TSF20H120C-S C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 150 µA @ 120 V 120 V 10A -55°C ~ 150°C 860 mV @ 10 A
TSF20H150C-S C0G

TSF20H150C-S C0G

DIODE SCHOTTKY 150V 10A ITO220AB

Taiwan Semiconductor Corporation
2,809 -

RFQ

TSF20H150C-S C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 10A -55°C ~ 150°C 920 mV @ 10 A
TSSE3H60 RVG

TSSE3H60 RVG

DIODE SCHOTTKY 60V 3A SOD123HE

Taiwan Semiconductor Corporation
222,149 -

RFQ

TSSE3H60 RVG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 60 V 60 V 3A -55°C ~ 150°C 600 mV @ 3 A
TSP15U100S

TSP15U100S

DIODE SCHOTTKY 100V 15A TO277A

Taiwan Semiconductor Corporation
11,745 -

RFQ

TSP15U100S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 250 µA @ 100 V 100 V 15A -55°C ~ 150°C 700 mV @ 15 A
TSP10H60S S1G

TSP10H60S S1G

DIODE SCHOTTKY 60V 10A TO277A

Taiwan Semiconductor Corporation
17,264 -

RFQ

TSP10H60S S1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 150 µA @ 60 V 60 V 10A -55°C ~ 150°C 640 mV @ 10 A
TPUH6J S1G

TPUH6J S1G

DIODE GEN PURP 600V 6A TO277A

Taiwan Semiconductor Corporation
19,400 -

RFQ

TPUH6J S1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 45 ns 10 µA @ 600 V 600 V 6A -55°C ~ 175°C 3 V @ 6 A
1SS133M R0G

1SS133M R0G

DIODE GEN PURP 90V 150MA DO34

Taiwan Semiconductor Corporation
50,215 -

RFQ

1SS133M R0G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 4pF @ 0V, 1MHz 4 ns 500 nA @ 80 V 90 V 150mA 175°C (Max) 1.2 V @ 150 mA
SS36L RVG

SS36L RVG

DIODE SCHOTTKY 60V 3A SUB SMA

Taiwan Semiconductor Corporation
8,252 -

RFQ

SS36L RVG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 60 V 60 V 3A -55°C ~ 150°C 750 mV @ 3 A
SS34L RVG

SS34L RVG

DIODE SCHOTTKY 40V 3A SUB SMA

Taiwan Semiconductor Corporation
3,144 -

RFQ

SS34L RVG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 40 V 40 V 3A -55°C ~ 150°C 500 mV @ 3 A
SS16M RSG

SS16M RSG

DIODE SCHOTTKY 60V 1A MICRO SMA

Taiwan Semiconductor Corporation
6,932 -

RFQ

SS16M RSG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 40pF @ 4V, 1MHz - 50 µA @ 60 V 60 V 1A -55°C ~ 150°C 680 mV @ 1 A
TSS83L45 MWG

TSS83L45 MWG

DIODE SCHOTTKY 45V 3A SOD128

Taiwan Semiconductor Corporation
13,443 -

RFQ

TSS83L45 MWG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 220pF @ 4V, 1MHz - 500 µA @ 45 V 45 V 3A -55°C ~ 150°C 560 mV @ 3 A
RS1BL RVG

RS1BL RVG

DIODE GEN PURP 100V 800MA SUBSMA

Taiwan Semiconductor Corporation
8,392 -

RFQ

RS1BL RVG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 800mA -55°C ~ 150°C 1.3 V @ 800 mA
1N4148 A0G

1N4148 A0G

DIODE GEN PURP 100V 150MA DO35

Taiwan Semiconductor Corporation
23,196 -

RFQ

1N4148 A0G

Ficha técnica

Cut Tape (CT),Tape & Box (TB) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 4pF @ 0V, 1MHz 4 ns 5 µA @ 75 V 100 V 150mA -65°C ~ 150°C 1 V @ 100 mA
BAT54A RFG

BAT54A RFG

DIODE SCHOTTKY 30V 200MA SOT23

Taiwan Semiconductor Corporation
15,973 -

RFQ

BAT54A RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 10pF @ 1V, 1MHz 5 ns 2 µA @ 25 V 30 V 200mA -55°C ~ 125°C 1 V @ 100 mA
BAT54C RFG

BAT54C RFG

DIODE SCHOTTKY 30V 200MA SOT23

Taiwan Semiconductor Corporation
10,341 -

RFQ

BAT54C RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 10pF @ 1V, 1MHz 5 ns 2 µA @ 25 V 30 V 200mA -55°C ~ 125°C 1 V @ 100 mA
FR157G A0G

FR157G A0G

DIODE GEN PURP 1KV 1.5A DO204AC

Taiwan Semiconductor Corporation
6,659 -

RFQ

FR157G A0G

Ficha técnica

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V 1000 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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