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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ESH2D M4GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
3,122 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 20 ns | 2 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 900 mV @ 2 A | |
|
|
SK320BHM4GDIODE SCHOTTKY 200V 3A DO214AA Taiwan Semiconductor Corporation |
3,027 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A |
|
S1GM RSGDIODE GEN PURP 400V 1A MICRO SMA Taiwan Semiconductor Corporation |
2,671 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 4V, 1MHz | 780 ns | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
S12KC R7GDIODE GEN PURP 800V 12A DO214AB Taiwan Semiconductor Corporation |
2,839 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 78pF @ 4V, 1MHz | - | 1 µA @ 800 V | 800 V | 12A | -55°C ~ 150°C | 1.1 V @ 12 A | |
|
|
S4G R7GDIODE GEN PURP 400V 4A DO214AB Taiwan Semiconductor Corporation |
3,020 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | |
|
SK12H45 R0GDIODE SCHOTTKY 45V 12A DO201AD Taiwan Semiconductor Corporation |
3,867 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 120 µA @ 45 V | 45 V | 12A | 200°C (Max) | 550 mV @ 12 A | |
|
|
SK12H60 R0GDIODE SCHOTTKY 60V 12A DO201AD Taiwan Semiconductor Corporation |
2,329 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 120 µA @ 60 V | 60 V | 12A | 200°C (Max) | 700 mV @ 12 A | |
|
|
SR1204DIODE SCHOTTKY 40V 12A DO201AD Taiwan Semiconductor Corporation |
2,885 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 12A | -50°C ~ 150°C | 550 mV @ 12 A | |
|
|
ES2J M4GDIODE GEN PURP 600V 2A DO214AA Taiwan Semiconductor Corporation |
2,357 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
SR203DIODE SCHOTTKY 2A 30V DO-15 Taiwan Semiconductor Corporation |
3,712 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 2A (DC) | -55°C ~ 125°C | 550 mV @ 2 A | ||
|
SFF504G C0GDIODE GEN PURP 200V 5A ITO220AB Taiwan Semiconductor Corporation |
3,514 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 5A | -55°C ~ 150°C | 980 mV @ 2.5 A | |
|
|
SFF505G C0GDIODE GEN PURP 300V 5A ITO220AB Taiwan Semiconductor Corporation |
3,625 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 5A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
|
S5ADIODE GEN PURP 50V 5A DO214AB Taiwan Semiconductor Corporation |
2,390 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | ||
|
|
SFF1008GA C0GDIODE GEN PURP 600V 10A ITO220AB Taiwan Semiconductor Corporation |
3,144 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.7 V @ 5 A | |
|
|
S3D V6GDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
3,505 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | - | |
|
|
ES3DB M4GDIODE GEN PURP 200V 3A DO214AA Taiwan Semiconductor Corporation |
3,614 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 46pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
S1BL RUGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
3,650 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
S1DL RUGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
2,636 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
S1GL RUGDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
3,226 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
S1JL RUGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
3,579 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
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