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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
6A80GDIODE GEN PURP 800V 6A R-6 Taiwan Semiconductor Corporation |
2,871 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
RS2J M4GDIODE GEN PURP 600V 2A DO214AA Taiwan Semiconductor Corporation |
2,122 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
RS2K M4GDIODE GEN PURP 800V 2A DO214AA Taiwan Semiconductor Corporation |
2,088 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
RS2M M4GDIODE GEN PURP 2A DO214AA Taiwan Semiconductor Corporation |
3,702 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
HS2DA M2GDIODE GEN PURP 200V 1.5A DO214AC Taiwan Semiconductor Corporation |
2,823 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
|
HS2FA M2GDIODE GEN PURP 300V 1.5A DO214AC Taiwan Semiconductor Corporation |
2,378 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
|
HS2GA M2GDIODE GEN PURP 400V 1.5A DO214AC Taiwan Semiconductor Corporation |
2,583 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
HS2JA M2GDIODE GEN PURP 600V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,157 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.7 V @ 1.5 A | |
|
ESDLW RQGDIODE, SUPER FAST Taiwan Semiconductor Corporation |
2,742 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 21pF @ 4V, 1MHz | 35 ns | 1 µA @ 200 V | 200 V | 800mA | -55°C ~ 150°C | 950 mV @ 800 mA | |
|
|
ESGLW RQGDIODE, SUPER FAST Taiwan Semiconductor Corporation |
3,683 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 400 V | 400 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
ESJLW RQGDIODE, SUPER FAST Taiwan Semiconductor Corporation |
3,298 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 19pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 800mA | -55°C ~ 150°C | 1.7 V @ 800 mA | |
|
|
ES1LD M2GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
2,255 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
ES1LG M2GDIODE GEN PURP 400V 1A DO214AC Taiwan Semiconductor Corporation |
3,035 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
ES1LJ M2GDIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation |
3,364 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
SFT14G R0GDIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation |
2,534 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
UG06A R0GDIODE GEN PURP 50V 600MA TS-1 Taiwan Semiconductor Corporation |
2,427 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 50 V | 50 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA | |
|
|
UG06B R0GDIODE GEN PURP 100V 600MA TS-1 Taiwan Semiconductor Corporation |
3,318 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 100 V | 100 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA | |
|
|
UG06C R0GDIODE GEN PURP 150V 600MA TS-1 Taiwan Semiconductor Corporation |
3,188 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 150 V | 150 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA | |
|
|
UG06D R0GDIODE GEN PURP 200V 600MA TS-1 Taiwan Semiconductor Corporation |
2,715 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 9pF @ 4V, 1MHz | 15 ns | 5 µA @ 200 V | 200 V | 600mA | -55°C ~ 150°C | 950 mV @ 600 mA | |
|
S1BHDIODE GEN PURP 100V 1A DO214AC Taiwan Semiconductor Corporation |
2,595 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 175°C | 1.1 V @ 1 A |
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