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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SR510HR0GDIODE SCHOTTKY 100V 5A DO201AD Taiwan Semiconductor Corporation |
2,842 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A |
|
ES3FBHM4GDIODE GEN PURP 300V 3A DO214AA Taiwan Semiconductor Corporation |
2,377 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 41pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1.13 V @ 3 A |
|
|
ES3GBHM4GDIODE GEN PURP 400V 3A DO214AA Taiwan Semiconductor Corporation |
2,525 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 41pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.13 V @ 3 A |
|
1N5818 R0GDIODE SCHOTTKY 30V 1A DO204AL Taiwan Semiconductor Corporation |
3,493 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 55pF @ 4V, 1MHz | - | 1 mA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | |
|
|
ES3JBHM4GDIODE GEN PURP 600V 3A DO214AA Taiwan Semiconductor Corporation |
3,893 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 34pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.45 V @ 3 A |
|
|
1N5819 R0GDIODE SCHOTTKY 40V 1A DO204AL Taiwan Semiconductor Corporation |
2,986 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 55pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 600 mV @ 1 A | |
|
|
SR104 R0GDIODE SCHOTTKY 40V 1A DO204AL Taiwan Semiconductor Corporation |
3,291 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | |
|
SS13 M2GDIODE SCHOTTKY 30V 1A DO214AC Taiwan Semiconductor Corporation |
2,330 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
RS1AL RVGDIODE GEN PURP 50V 800MA SUB SMA Taiwan Semiconductor Corporation |
2,680 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
SS110 M2GDIODE SCHOTTKY 100V 1A DO214AC Taiwan Semiconductor Corporation |
2,408 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 125°C | 800 mV @ 1 A | |
|
|
RS1BL RUGDIODE GEN PURP 100V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
SS14 M2GDIODE SCHOTTKY 40V 1A DO214AC Taiwan Semiconductor Corporation |
2,779 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
|
RS1DL RUGDIODE GEN PURP 200V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,892 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
SS16 M2GDIODE SCHOTTKY 60V 1A DO214AC Taiwan Semiconductor Corporation |
3,124 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 750 mV @ 1 A | |
|
|
RS1GL RUGDIODE GEN PURP 400V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,946 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
RS1JL RUGDIODE GEN PURP 600V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,940 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
RS1KL RUGDIODE GEN PURP 800V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,352 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
RSFDL RUGDIODE GEN PURP 200V 500MA SUBSMA Taiwan Semiconductor Corporation |
2,224 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
|
RSFJL RUGDIODE GEN PURP 600V 500MA SUBSMA Taiwan Semiconductor Corporation |
2,554 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
MMBD3004 RFGDIODE GEN PURP 350V 225MA SOT23 Taiwan Semiconductor Corporation |
3,873 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 1V, 1MHz | 50 ns | 100 nA @ 350 V | 350 V | 225mA | -65°C ~ 150°C | 1.25 V @ 200 mA |
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