Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
PU6DBH

PU6DBH

25NS, 6A, 200V, ULTRA FAST RECOV

Taiwan Semiconductor Corporation
2,482 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 105pF @ 4V, 1MHz 25 ns 2 µA @ 200 V 200 V 6A (DC) -55°C ~ 175°C 940 mV @ 6 A
PU6BBH

PU6BBH

25NS, 6A, 100V, ULTRA FAST RECOV

Taiwan Semiconductor Corporation
2,345 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 105pF @ 4V, 1MHz 25 ns 2 µA @ 100 V 100 V 6A (DC) -55°C ~ 175°C 940 mV @ 6 A
HS1M R3G

HS1M R3G

DIODE GEN PURP 1KV 1A DO214AC

Taiwan Semiconductor Corporation
2,264 -

RFQ

HS1M R3G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 20pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V 1000 V 1A -55°C ~ 150°C 1.7 V @ 1 A
SS220LW RVG

SS220LW RVG

DIODE SCHOTTKY 200V 2A SOD123W

Taiwan Semiconductor Corporation
2,948 -

RFQ

SS220LW RVG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 10 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
S5QB M3G

S5QB M3G

5A, 1200V, STANDARD RECOVERY REC

Taiwan Semiconductor Corporation
2,026 -

RFQ

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 36pF @ 4V, 1MHz - 10 µA @ 1200 V 1200 V 5A (DC) -55°C ~ 150°C 1.1 V @ 5 A
1N5406G R0G

1N5406G R0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation
3,319 -

RFQ

1N5406G R0G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1 V @ 3 A
1N5407G R0G

1N5407G R0G

DIODE GEN PURP 800V 3A DO201AD

Taiwan Semiconductor Corporation
2,517 -

RFQ

1N5407G R0G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 3A -55°C ~ 150°C 1 V @ 3 A
1N5408G R0G

1N5408G R0G

DIODE GEN PURP 3A DO201AD

Taiwan Semiconductor Corporation
3,586 -

RFQ

1N5408G R0G

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 1000 V - 3A -55°C ~ 150°C 1 V @ 3 A
MUR160 R0G

MUR160 R0G

DIODE GEN PURP 600V 1A DO204AC

Taiwan Semiconductor Corporation
3,492 -

RFQ

MUR160 R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 4V, 1MHz 50 ns 5 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.25 V @ 1 A
MUR190 R0G

MUR190 R0G

DIODE GEN PURP 900V 1A DO204AC

Taiwan Semiconductor Corporation
2,079 -

RFQ

MUR190 R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 75 ns 5 µA @ 900 V 900 V 1A -55°C ~ 175°C 1.7 V @ 1 A
HER107G A0G

HER107G A0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation
2,069 -

RFQ

HER107G A0G

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
SR304 R0G

SR304 R0G

DIODE SCHOTTKY 40V 3A DO201AD

Taiwan Semiconductor Corporation
3,501 -

RFQ

SR304 R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 3A -55°C ~ 125°C 550 mV @ 3 A
SR306

SR306

DIODE SCHOTTKY 60V 3A DO201AD

Taiwan Semiconductor Corporation
2,439 -

RFQ

SR306

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 3A -55°C ~ 150°C 700 mV @ 3 A
HS1DLW RVG

HS1DLW RVG

DIODE GEN PURP 200V 1A SOD123W

Taiwan Semiconductor Corporation
2,166 -

RFQ

HS1DLW RVG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 16pF @ 4V, 1MHz 50 ns 1 µA @ 200 V 200 V 1A -55°C ~ 175°C 1 V @ 1 A
HS1JLW RVG

HS1JLW RVG

DIODE GEN PURP 600V 1A SOD123W

Taiwan Semiconductor Corporation
2,195 -

RFQ

HS1JLW RVG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 16pF @ 4V, 1MHz 75 ns 1 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.7 V @ 1 A
S2AA R3G

S2AA R3G

DIODE GEN PURP 50V 1.5A DO214AC

Taiwan Semiconductor Corporation
3,755 -

RFQ

S2AA R3G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 1.5 µs 5 µA @ 50 V 50 V 1.5A -55°C ~ 150°C 1.1 V @ 1.5 A
S2DA R3G

S2DA R3G

DIODE GEN PURP 200V 1.5A DO214AC

Taiwan Semiconductor Corporation
2,975 -

RFQ

S2DA R3G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 1.5 µs 5 µA @ 200 V 200 V 1.5A -55°C ~ 150°C 1.1 V @ 1.5 A
UF1GLW RVG

UF1GLW RVG

DIODE GEN PURP 400V 1A SOD123W

Taiwan Semiconductor Corporation
2,736 -

RFQ

UF1GLW RVG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 4V, 1MHz 20 ns 1 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.25 V @ 1 A
TS4148C RCG

TS4148C RCG

DIODE GEN PURP 75V 150MA 0603

Taiwan Semiconductor Corporation
3,206 -

RFQ

TS4148C RCG

Ficha técnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 4pF @ 0V, 1MHz - 5 µA @ 75 V 75 V 150mA -55°C ~ 150°C 1.25 V @ 100 mA
RB520S-30 RSG

RB520S-30 RSG

DIODE SCHOTTKY 30V 200MA SOD523F

Taiwan Semiconductor Corporation
3,893 -

RFQ

RB520S-30 RSG

Ficha técnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount - - 1 µA @ 10 V 30 V 200mA -55°C ~ 125°C 600 mV @ 200 mA
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1500+ Média diária de RFQ
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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