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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RSFML RVGDIODE GEN PURP 1KV 500MA SUB SMA Taiwan Semiconductor Corporation |
2,099 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
|
S1ML RVGDIODE GEN PURP 1000V 1A SUB SMA Taiwan Semiconductor Corporation |
2,903 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 1000 V | - | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
1N5401GDIODE GEN PURP 3A 100V DO-201AD Taiwan Semiconductor Corporation |
3,183 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 3A (DC) | -55°C ~ 150°C | 1.1 V @ 3 A | ||
|
|
1N5402GDIODE GEN PURP 3A 200V DO-201AD Taiwan Semiconductor Corporation |
3,407 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 3A (DC) | -55°C ~ 150°C | 1 V @ 3 A | ||
|
SR515HR0GDIODE SCHOTTKY 150V 5A DO201AD Taiwan Semiconductor Corporation |
3,427 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 5A | -55°C ~ 150°C | 1.05 V @ 5 A |
|
|
SR520HR0GDIODE SCHOTTKY 200V 5A DO201AD Taiwan Semiconductor Corporation |
3,865 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 200 V | 200 V | 5A | -55°C ~ 150°C | 1.05 V @ 5 A |
|
SSB44DIODE SCHOTTKY 40V 4A DO214AA Taiwan Semiconductor Corporation |
3,346 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 235pF @ 4V, 1MHz | - | 200 µA @ 40 V | 40 V | 4A (DC) | -55°C ~ 150°C | 460 mV @ 4 A | ||
|
SR204 A0GDIODE SCHOTTKY 40V 2A DO204AC Taiwan Semiconductor Corporation |
2,459 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 2A | -55°C ~ 125°C | 550 mV @ 2 A | |
|
ES2CA R3GDIODE GEN PURP 150V 2A DO214AC Taiwan Semiconductor Corporation |
3,187 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
SS12 M2GDIODE SCHOTTKY 20V 1A DO214AC Taiwan Semiconductor Corporation |
2,194 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
SS14LWDIODE SCHOTTKY 40V 1A SUB SMA Taiwan Semiconductor Corporation |
2,956 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 1A (DC) | -55°C ~ 125°C | 550 mV @ 1 A | |
|
|
SS110LWDIODE SCHOTTKY 100V 1A SOD123W Taiwan Semiconductor Corporation |
2,426 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 150°C | 800 mV @ 1 A | |
|
|
SF35G R0GDIODE GEN PURP 300V 3A DO201AD Taiwan Semiconductor Corporation |
2,499 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
|
SF36G R0GDIODE GEN PURP 400V 3A DO201AD Taiwan Semiconductor Corporation |
3,048 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
UF4006 R0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
3,313 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
UF4007 R0GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
3,157 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
ES3JHDIODE GEN PURP 600V 3A DO214AB Taiwan Semiconductor Corporation |
2,823 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 3A (DC) | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
ES1DHM2GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
3,283 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
ES1F M2GDIODE GEN PURP 300V 1A DO214AC Taiwan Semiconductor Corporation |
2,333 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 1V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
SK14B R5GDIODE SCHOTTKY 40V 1A DO214AA Taiwan Semiconductor Corporation |
2,814 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A |
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