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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SR810HR0GDIODE SCHOTTKY 100V 8A DO201AD Taiwan Semiconductor Corporation |
3,338 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 920 mV @ 8 A |
|
|
SR815HR0GDIODE SCHOTTKY 150V 8A DO201AD Taiwan Semiconductor Corporation |
2,504 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 8A | -55°C ~ 150°C | 1.02 V @ 8 A |
|
|
UG54GHR0GDIODE GEN PURP 200V 5A DO201AD Taiwan Semiconductor Corporation |
3,538 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 10 µA @ 200 V | 200 V | 5A | -55°C ~ 175°C | 1.05 V @ 5 A |
|
|
UG56GHR0GDIODE GEN PURP 400V 5A DO201AD Taiwan Semiconductor Corporation |
2,689 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 175°C | 1.55 V @ 5 A |
|
MUR190A A0GDIODE GEN PURP 900V 1A DO204AL Taiwan Semiconductor Corporation |
3,865 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Not For New Designs | Through Hole | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 900 V | 900 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A | |
|
|
UG58GHR0GDIODE GEN PURP 600V 5A DO201AD Taiwan Semiconductor Corporation |
3,255 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 30 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 2.1 V @ 5 A |
|
TSS0340L RWGDIODE SCHOTTKY 45V 30MA 1005 Taiwan Semiconductor Corporation |
2,681 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Not For New Designs | Surface Mount | 1.5pF @ 1V, 1MHz | - | 1 µA @ 40 V | 45 V | 30mA | -40°C ~ 125°C | 370 mV @ 1 mA | |
|
S10GCHDIODE GEN PURP 400V 10A DO214AB Taiwan Semiconductor Corporation |
3,638 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 10A (DC) | -55°C ~ 150°C | 1.1 V @ 10 A | |
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TSS0340U RGGDIODE SCHOTTKY 45V 30MA 0603 Taiwan Semiconductor Corporation |
2,148 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 1.5pF @ 1V, 1MHz | - | 1 µA @ 40 V | 45 V | 30mA | -40°C ~ 125°C | 370 mV @ 1 mA | |
|
|
S10KCHDIODE GEN PURP 800V 10A DO214AB Taiwan Semiconductor Corporation |
3,828 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | - | 1 µA @ 800 V | 800 V | 10A (DC) | -55°C ~ 150°C | 1.1 V @ 10 A | |
|
|
S10JCHDIODE GEN PURP 600V 10A DO214AB Taiwan Semiconductor Corporation |
3,991 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | - | 1 µA @ 600 V | 600 V | 10A (DC) | -55°C ~ 150°C | 1.1 V @ 10 A | |
|
|
S10MCHDIODE GEN PURP 10A DO214AB Taiwan Semiconductor Corporation |
3,368 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 10A (DC) | -55°C ~ 150°C | 1.1 V @ 10 A | |
|
S1JLWHRVGDIODE GEN PURP 600V 1A SOD123W Taiwan Semiconductor Corporation |
3,235 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
S1KLWHRVGDIODE GEN PURP 800V 1A SOD123W Taiwan Semiconductor Corporation |
3,612 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 1 µA @ 800 V | 800 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
6A100G R0GDIODE GEN PURP 6A R-6 Taiwan Semiconductor Corporation |
2,657 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
SMLW RVG0.8A, 1000V, STANDARD RECOVERY R Taiwan Semiconductor Corporation |
3,068 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 800mA | -55°C ~ 150°C | 1.1 V @ 800 mA | ||
|
|
6A40G R0GDIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation |
3,367 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
RS2D M4GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
3,633 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
6A60G R0GDIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation |
2,062 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
RS2G M4GDIODE GEN PURP 400V 2A DO214AA Taiwan Semiconductor Corporation |
3,411 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A |
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