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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HS1KLW RVGDIODE GEN PURP 800V 1A SOD123W Taiwan Semiconductor Corporation |
3,118 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 75 ns | 1 µA @ 800 V | 800 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A | |
|
RS1BDIODE GEN PURP 100V 1A DO214AC Taiwan Semiconductor Corporation |
2,709 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 150°C | 1.3 V @ 1 A | ||
|
|
RS1ADIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation |
3,417 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 1.3 V @ 1 A | ||
|
ES1DVHM2GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
2,538 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 17pF @ 4V, 1MHz | 15 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A |
|
|
SK310A M2GDIODE SCHOTTKY 100V 3A DO214AC Taiwan Semiconductor Corporation |
2,923 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A | |
|
|
SK33A M2GDIODE SCHOTTKY 30V 3A DO214AC Taiwan Semiconductor Corporation |
2,385 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 150°C | 550 mV @ 3 A | |
|
|
SK34A M2GDIODE SCHOTTKY 40V 3A DO214AC Taiwan Semiconductor Corporation |
3,007 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 550 mV @ 3 A | |
|
|
SK36A M2GDIODE SCHOTTKY 60V 3A DO214AC Taiwan Semiconductor Corporation |
3,663 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 720 mV @ 3 A | |
|
|
SS19DIODE SCHOTTKY 90V 1A DO214AC Taiwan Semiconductor Corporation |
2,546 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 1A (DC) | -55°C ~ 150°C | 800 mV @ 1 A | ||
|
ES1DL M2GDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,398 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
ES1GL M2GDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
3,646 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 1V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
RS1KLWHRVGDIODE GEN PURP 800V 1A SOD123W Taiwan Semiconductor Corporation |
3,640 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 250 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
S1DBHM4GDIODE GEN PURP 200V 1A DO214AA Taiwan Semiconductor Corporation |
3,824 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
S1GBHM4GDIODE GEN PURP 400V 1A DO214AA Taiwan Semiconductor Corporation |
3,848 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
S1JBHM4GDIODE GEN PURP 600V 1A DO214AA Taiwan Semiconductor Corporation |
2,693 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
S1KBHM4GDIODE GEN PURP 800V 1A DO214AA Taiwan Semiconductor Corporation |
2,530 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
S1MBHDIODE GEN PURP 1000V 1A DO214AA Taiwan Semiconductor Corporation |
3,830 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
BYG20D M2GDIODE GEN PURP 200V 1.5A DO214AC Taiwan Semiconductor Corporation |
2,988 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A | |
|
|
BYG20G M2GDIODE GEN PURP 400V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,573 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A | |
|
|
BYG20J M2GDIODE GEN PURP 600V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,001 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A |
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