Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
US1MHM2G

US1MHM2G

DIODE GEN PURP 1A DO214AC

Taiwan Semiconductor Corporation
3,292 -

RFQ

US1MHM2G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
1N4001GH

1N4001GH

DIODE GEN PURP 1A 50V DO-41

Taiwan Semiconductor Corporation
2,539 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 1A (DC) -55°C ~ 150°C 1 V @ 1 A
1N5398GHR0G

1N5398GHR0G

DIODE GEN PURP 800V 1.5A DO204AC

Taiwan Semiconductor Corporation
2,080 -

RFQ

1N5398GHR0G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
1N5399GHR0G

1N5399GHR0G

DIODE GEN PURP 1.5A DO204AC

Taiwan Semiconductor Corporation
3,664 -

RFQ

1N5399GHR0G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 1000 V - 1.5A -55°C ~ 150°C 1 V @ 1.5 A
SS14L RVG

SS14L RVG

DIODE SCHOTTKY 40V 1A SUB SMA

Taiwan Semiconductor Corporation
3,370 -

RFQ

SS14L RVG

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 40 V 40 V 1A -55°C ~ 125°C 550 mV @ 1 A
SS16L RVG

SS16L RVG

DIODE SCHOTTKY 60V 1A SUB SMA

Taiwan Semiconductor Corporation
2,883 -

RFQ

SS16L RVG

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 60 V 60 V 1A -55°C ~ 150°C 700 mV @ 1 A
FR154G R0G

FR154G R0G

DIODE GEN PURP 400V 1.5A DO204AC

Taiwan Semiconductor Corporation
3,879 -

RFQ

FR154G R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
FR155G R0G

FR155G R0G

DIODE GEN PURP 600V 1.5A DO204AC

Taiwan Semiconductor Corporation
3,558 -

RFQ

FR155G R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
FR156G R0G

FR156G R0G

DIODE GEN PURP 800V 1.5A DO204AC

Taiwan Semiconductor Corporation
2,700 -

RFQ

FR156G R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 500 ns 5 µA @ 800 V 800 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
FR157G R0G

FR157G R0G

DIODE GEN PURP 1.5A DO204AC

Taiwan Semiconductor Corporation
3,283 -

RFQ

FR157G R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V - 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
FR204G R0G

FR204G R0G

DIODE GEN PURP 400V 2A DO204AC

Taiwan Semiconductor Corporation
2,385 -

RFQ

FR204G R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.3 V @ 2 A
SR115 R0G

SR115 R0G

DIODE SCHOTTKY 150V 1A DO204AL

Taiwan Semiconductor Corporation
3,227 -

RFQ

SR115 R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 1A -55°C ~ 150°C 950 mV @ 1 A
S1MLS RVG

S1MLS RVG

DIODE GEN PURP 1KV 1.2A SOD123HE

Taiwan Semiconductor Corporation
3,906 -

RFQ

S1MLS RVG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - - 5 µA @ 1000 V 1000 V 1.2A -55°C ~ 150°C 1.3 V @ 1.2 A
UF1DHR0G

UF1DHR0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation
2,965 -

RFQ

UF1DHR0G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
UF1GHR0G

UF1GHR0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation
2,617 -

RFQ

UF1GHR0G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
UF1JHR0G

UF1JHR0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation
3,098 -

RFQ

UF1JHR0G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
UF1KHR0G

UF1KHR0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation
2,921 -

RFQ

UF1KHR0G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
UF1MHR0G

UF1MHR0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation
3,309 -

RFQ

UF1MHR0G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
UF4004HR0G

UF4004HR0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation
2,983 -

RFQ

UF4004HR0G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4005HR0G

UF4005HR0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation
2,890 -

RFQ

UF4005HR0G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
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1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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