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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SF41GDIODE GEN PURP 50V 4A DO201AD Taiwan Semiconductor Corporation |
3,356 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 4A (DC) | -55°C ~ 150°C | 1 V @ 4 A | ||
|
UGF12JDHDIODE GEN PURP 600V 12A ITO220AC Taiwan Semiconductor Corporation |
3,108 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 500 nA @ 600 V | 600 V | 12A (DC) | -55°C ~ 175°C | 3.1 V @ 12 A | |
|
|
1N5400GHDIODE GEN PURP 3A 50V DO-201AD Taiwan Semiconductor Corporation |
2,432 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 3A (DC) | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
SK86C R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,837 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 8A (DC) | -55°C ~ 150°C | 750 mV @ 8 A | ||
|
|
1N4006GA01A,800V,STD.GLASS PASSIVATED REC Taiwan Semiconductor Corporation |
2,891 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
F1T3GDIODE FAST REC 1A 200V TS-1 Taiwan Semiconductor Corporation |
3,942 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A (DC) | -55°C ~ 150°C | 1.3 V @ 1 A | ||
|
|
MBR10200DIODE SCHOTTKY 10A 200V TO220AB Taiwan Semiconductor Corporation |
3,367 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 200 V | 200 V | 10A (DC) | -55°C ~ 150°C | 1.05 V @ 10 A | ||
|
|
MUR8L60HDIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation |
3,720 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 65 ns | 5 µA @ 600 V | 600 V | 8A (DC) | -55°C ~ 175°C | 1.3 V @ 8 A | |
|
|
S5A R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,496 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | ||
|
|
1N4006GR01A,800V,STD.GLASS PASSIVATED REC Taiwan Semiconductor Corporation |
3,323 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
SR1202DIODE SCHOTTKY 20V 12A DO201AD Taiwan Semiconductor Corporation |
3,125 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 12A (DC) | -55°C ~ 150°C | 550 mV @ 12 A | ||
|
HER306G R0GDIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
3,803 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
HER307G R0GDIODE GEN PURP 800V 3A DO201AD Taiwan Semiconductor Corporation |
3,495 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
HER308G R0GDIODE GEN PURP 3A DO201AD Taiwan Semiconductor Corporation |
3,425 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | - | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
SR810 R0GDIODE SCHOTTKY 100V 8A DO201AD Taiwan Semiconductor Corporation |
2,832 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 920 mV @ 8 A | |
|
|
SR815 R0GDIODE SCHOTTKY 150V 8A DO201AD Taiwan Semiconductor Corporation |
3,942 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 8A | -55°C ~ 150°C | 1.02 V @ 8 A | |
|
HS3KB M4GDIODE GEN PURP 800V 3A DO214AA Taiwan Semiconductor Corporation |
2,053 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
UG54G R0GDIODE GEN PURP 200V 5A DO201AD Taiwan Semiconductor Corporation |
2,385 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 10 µA @ 200 V | 200 V | 5A | -55°C ~ 175°C | 1.05 V @ 5 A | |
|
|
2A03GDIODE GEN PURP 2A 200V DO-15 Taiwan Semiconductor Corporation |
2,914 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 2A (DC) | -55°C ~ 150°C | 1 V @ 2 A | ||
|
|
2A02GHDIODE GEN PURP 2A 100V DO-15 Taiwan Semiconductor Corporation |
3,594 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 2A (DC) | -55°C ~ 150°C | 1.1 V @ 2 A |
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