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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ES3B R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,351 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | ||
|
S1MR21A, 1000V, GLASS PASSIVATED SMD Taiwan Semiconductor Corporation |
3,714 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 1000 V | 1000 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | ||
|
SRA1060DIODE SCHOTTKY 60V 10A TO220AC Taiwan Semiconductor Corporation |
3,514 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 10A (DC) | -55°C ~ 150°C | 700 mV @ 10 A | ||
|
HS3MB M4GDIODE GEN PURP 3A DO214AA Taiwan Semiconductor Corporation |
3,345 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | - | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
MUR420HR0GDIODE GEN PURP 200V 4A DO201AD Taiwan Semiconductor Corporation |
2,425 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 4A | -55°C ~ 175°C | 890 mV @ 4 A |
|
|
UG56G R0GDIODE GEN PURP 400V 5A DO201AD Taiwan Semiconductor Corporation |
3,908 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 175°C | 1.55 V @ 5 A | |
|
|
MUR440HR0GDIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation |
3,164 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 4A | -55°C ~ 175°C | 1.28 V @ 4 A |
|
|
UG58GDIODE GEN PURP 600V 5A DO201AD Taiwan Semiconductor Corporation |
2,173 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 30 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 2.1 V @ 5 A | |
|
|
1N5406GHR0GDIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
3,064 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1 V @ 3 A |
|
|
SSL22HM4GDIODE SCHOTTKY 20V 2A DO214AA Taiwan Semiconductor Corporation |
2,826 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 2A | -55°C ~ 125°C | 410 mV @ 2 A |
|
|
1N5407GHR0GDIODE GEN PURP 800V 3A DO201AD Taiwan Semiconductor Corporation |
2,678 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1 V @ 3 A |
|
|
SSL23HM4GDIODE SCHOTTKY 30V 2A DO214AA Taiwan Semiconductor Corporation |
3,888 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 30 V | 30 V | 2A | -55°C ~ 125°C | 410 mV @ 2 A |
|
|
1N5408GHR0GDIODE GEN PURP 3A DO201AD Taiwan Semiconductor Corporation |
2,442 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 3A | -55°C ~ 150°C | 1 V @ 3 A |
|
RS1BLHR3GDIODE GEN PURP 100V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,776 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
|
|
SSL24HM4GDIODE SCHOTTKY 40V 2A DO214AA Taiwan Semiconductor Corporation |
2,554 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 2A | -55°C ~ 125°C | 410 mV @ 2 A |
|
MUR160HR0GDIODE GEN PURP 600V 1A DO204AC Taiwan Semiconductor Corporation |
3,379 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 4V, 1MHz | 50 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
|
|
SRA1640HDIODE SCHOTTKY 40V 16A TO220AC Taiwan Semiconductor Corporation |
2,688 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 16A (DC) | -55°C ~ 125°C | 550 mV @ 16 A | |
|
|
SK52C R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,660 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A | ||
|
|
S1MR31A, 1000V, GLASS PASSIVATED SMD Taiwan Semiconductor Corporation |
3,236 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 1000 V | 1000 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | ||
|
SF43GHDIODE GEN PURP 150V 4A DO201AD Taiwan Semiconductor Corporation |
2,198 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 4A (DC) | -55°C ~ 150°C | 1 V @ 4 A |
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