Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SRT12HR0G

SRT12HR0G

DIODE SCHOTTKY 20V 1A TS-1

Taiwan Semiconductor Corporation
2,282 -

RFQ

SRT12HR0G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 20 V 20 V 1A -55°C ~ 125°C 550 mV @ 1 A
SRT13 R0G

SRT13 R0G

DIODE SCHOTTKY 30V 1A TS-1

Taiwan Semiconductor Corporation
3,087 -

RFQ

SRT13 R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 30 V 30 V 1A -55°C ~ 125°C 550 mV @ 1 A
SRT13HR0G

SRT13HR0G

DIODE SCHOTTKY 30V 1A TS-1

Taiwan Semiconductor Corporation
2,119 -

RFQ

SRT13HR0G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 30 V 30 V 1A -55°C ~ 125°C 550 mV @ 1 A
SRT15 R0G

SRT15 R0G

DIODE SCHOTTKY 50V 1A TS-1

Taiwan Semiconductor Corporation
2,470 -

RFQ

SRT15 R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 50 V 50 V 1A -55°C ~ 150°C 700 mV @ 1 A
SRT15HR0G

SRT15HR0G

DIODE SCHOTTKY 50V 1A TS-1

Taiwan Semiconductor Corporation
3,858 -

RFQ

SRT15HR0G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 50 V 50 V 1A -55°C ~ 150°C 700 mV @ 1 A
SS14LWHRVG

SS14LWHRVG

DIODE SCHOTTKY 40V 1A SOD123W

Taiwan Semiconductor Corporation
2,733 -

RFQ

SS14LWHRVG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 40 V 40 V 1A -55°C ~ 150°C 550 mV @ 1 A
S3AB R5G

S3AB R5G

DIODE GEN PURP 50V 3A DO214AA

Taiwan Semiconductor Corporation
1,220 -

RFQ

S3AB R5G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 40pF @ 4V, 1MHz 1.5 µs 10 µA @ 50 V 50 V 3A -55°C ~ 150°C 1.15 V @ 3 A
SRT19 R0G

SRT19 R0G

DIODE SCHOTTKY 90V 1A TS-1

Taiwan Semiconductor Corporation
3,070 -

RFQ

SRT19 R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 90 V 90 V 1A -55°C ~ 150°C 800 mV @ 1 A
SRT19HR0G

SRT19HR0G

DIODE SCHOTTKY 90V 1A TS-1

Taiwan Semiconductor Corporation
3,613 -

RFQ

SRT19HR0G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 90 V 90 V 1A -55°C ~ 150°C 800 mV @ 1 A
LL5818 L0G

LL5818 L0G

DIODE SCHOTTKY 30V 1A MELF

Taiwan Semiconductor Corporation
3,018 -

RFQ

LL5818 L0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 110pF @ 4V, 1MHz - 500 µA @ 30 V 30 V 1A -65°C ~ 125°C 875 mV @ 3 A
LL5819 L0

LL5819 L0

DIODE SCHOTTKY 40V 1A MELF

Taiwan Semiconductor Corporation
2,820 -

RFQ

LL5819 L0

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount 110pF @ 4V, 1MHz - 500 µA @ 40 V 40 V 1A -65°C ~ 125°C 900 mV @ 3 A
LSR105 L0G

LSR105 L0G

DIODE SCHOTTKY 50V 1A MELF

Taiwan Semiconductor Corporation
2,429 -

RFQ

LSR105 L0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 80pF @ 4V, 1MHz - 1 mA @ 50 V 50 V 1A -65°C ~ 150°C 700 mV @ 1 A
LSR106 L0G

LSR106 L0G

DIODE SCHOTTKY 60V 1A MELF

Taiwan Semiconductor Corporation
2,767 -

RFQ

LSR106 L0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 80pF @ 4V, 1MHz - 1 mA @ 60 V 60 V 1A -65°C ~ 150°C 700 mV @ 1 A
BA159G A0G

BA159G A0G

DIODE GEN PURP 1KV 1A DO204AL

Taiwan Semiconductor Corporation
2,705 -

RFQ

BA159G A0G

Ficha técnica

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 250 ns 5 µA @ 1000 V 1000 V 1A -55°C ~ 150°C 1.2 V @ 1 A
S2DAL M3G

S2DAL M3G

2A, 200V, STANDARD RECOVERY RECT

Taiwan Semiconductor Corporation
2,290 -

RFQ

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 12pF @ 4V, 1MHz - 1 µA @ 200 V 200 V 2A (DC) -55°C ~ 150°C 1.1 V @ 2 A
BAS85 L0G

BAS85 L0G

DIODE SCHTKY 30V 200MA MINI MELF

Taiwan Semiconductor Corporation
2,708 -

RFQ

BAS85 L0G

Ficha técnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Obsolete Surface Mount 10pF @ 1V, 1MHz 5 ns 2 µA @ 25 V 30 V 200mA 125°C (Max) 800 mV @ 100 mA
ES1A M2G

ES1A M2G

DIODE GEN PURP 50V 1A DO214AC

Taiwan Semiconductor Corporation
2,551 -

RFQ

ES1A M2G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 16pF @ 1V, 1MHz 35 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 950 mV @ 1 A
ES1AHM2G

ES1AHM2G

DIODE GEN PURP 50V 1A DO214AC

Taiwan Semiconductor Corporation
2,097 -

RFQ

ES1AHM2G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 16pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 950 mV @ 1 A
ES1AL M2G

ES1AL M2G

DIODE GEN PURP 50V 1A SUB SMA

Taiwan Semiconductor Corporation
2,890 -

RFQ

ES1AL M2G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 1V, 1MHz 35 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 950 mV @ 1 A
ES1AL MHG

ES1AL MHG

DIODE GEN PURP 50V 1A SUB SMA

Taiwan Semiconductor Corporation
2,025 -

RFQ

ES1AL MHG

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 1V, 1MHz 35 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 950 mV @ 1 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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