+86 075582561136
Carregar BOM
Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RSFAL MTGDIODE GEN PURP 50V 500MA SUB SMA Taiwan Semiconductor Corporation |
3,214 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
|
RSFAL RQGDIODE GEN PURP 50V 500MA SUB SMA Taiwan Semiconductor Corporation |
2,831 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
|
RSFAL RTGDIODE GEN PURP 50V 500MA SUB SMA Taiwan Semiconductor Corporation |
2,864 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
|
RSFALHMQGDIODE GEN PURP 50V 500MA SUB SMA Taiwan Semiconductor Corporation |
2,943 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA |
|
ES2GAL M3G35NS, 2A, 400V, SUPER FAST RECOV Taiwan Semiconductor Corporation |
7,000 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | ||
|
ES2GFS M3G35NS, 2A, 400V, SUPER FAST RECOV Taiwan Semiconductor Corporation |
6,990 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 35 ns | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | ||
|
|
ES2DFS M3G35NS, 2A, 200V, SUPER FAST RECOV Taiwan Semiconductor Corporation |
6,848 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 35 ns | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | ||
|
|
ES2JFS M3G35NS, 2A, 600V, SUPER FAST RECOV Taiwan Semiconductor Corporation |
6,210 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | ||
|
SK320A R3GDIODE SCHOTTKY 200V 3A DO214AC Taiwan Semiconductor Corporation |
1,793 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
|
|
ES2DAL M3G35NS, 2A, 200V, SUPER FAST RECOV Taiwan Semiconductor Corporation |
6,375 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 35 ns | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | ||
|
|
RSFALHMTGDIODE GEN PURP 50V 500MA SUB SMA Taiwan Semiconductor Corporation |
2,133 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA |
|
|
RSFALHRQGDIODE GEN PURP 50V 500MA SUB SMA Taiwan Semiconductor Corporation |
2,041 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA |
|
|
RSFALHRTGDIODE GEN PURP 50V 500MA SUB SMA Taiwan Semiconductor Corporation |
3,587 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA |
|
|
RSFBL MQGDIODE GEN PURP 100V 500MA SUBSMA Taiwan Semiconductor Corporation |
3,791 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
|
RSFBL MTGDIODE GEN PURP 100V 500MA SUBSMA Taiwan Semiconductor Corporation |
3,742 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
|
RSFBL RQGDIODE GEN PURP 100V 500MA SUBSMA Taiwan Semiconductor Corporation |
2,987 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
|
RSFBL RTGDIODE GEN PURP 100V 500MA SUBSMA Taiwan Semiconductor Corporation |
3,063 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
|
RSFBLHMQGDIODE GEN PURP 100V 500MA SUBSMA Taiwan Semiconductor Corporation |
3,320 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA |
|
|
RSFBLHMTGDIODE GEN PURP 100V 500MA SUBSMA Taiwan Semiconductor Corporation |
3,508 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA |
|
|
RSFBLHRQGDIODE GEN PURP 100V 500MA SUBSMA Taiwan Semiconductor Corporation |
2,771 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA |
- 1500+ Média diária de RFQ
- 20,000.000 Unidade padrão do produto
- 1800+ Fabricantes em todo o mundo
- 15,000+ Armazém em estoque
