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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4933GHDIODE GEN PURP 50V 1A DO41 Taiwan Semiconductor Corporation |
3,746 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
UGA8120HDIODE GEN PURP 8A TO220AC Taiwan Semiconductor Corporation |
3,166 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 70 ns | 5 µA @ 1200 V | 1200 V | 8A (DC) | -55°C ~ 175°C | 2.8 V @ 8 A | |
|
|
1N4934GDIODE GEN PURP 100V 1A DO41 Taiwan Semiconductor Corporation |
2,435 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 150°C | 1.2 V @ 1 A | ||
|
|
GPA804DIODE GEN PURP 8A 400V TO220AC Taiwan Semiconductor Corporation |
3,767 | - |
RFQ |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 8A (DC) | -55°C ~ 150°C | 1.1 V @ 8 A | ||
|
SF33GHDIODE GEN PURP 150V 3A DO201AD Taiwan Semiconductor Corporation |
3,656 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 3A (DC) | -55°C ~ 150°C | 950 mV @ 3 A | |
|
|
MBRF760DIODE SCHOTTKY 60V 7.5A ITO220AC Taiwan Semiconductor Corporation |
3,567 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 60 V | 60 V | 7.5A (DC) | -55°C ~ 150°C | 750 mV @ 7.5 A | ||
|
|
MBRF2045DIODE SCHOTTKY 45V 20A ITO220 Taiwan Semiconductor Corporation |
2,876 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 45 V | 45 V | 20A (DC) | -55°C ~ 150°C | 750 mV @ 20 A | ||
|
|
SR102HDIODE SCHOTTKY 20V 1A DO-41 Taiwan Semiconductor Corporation |
2,541 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | |
|
|
HERAF1007GDIODE GEN PURP 10A 800V IT0-220A Taiwan Semiconductor Corporation |
2,394 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 80 ns | 10 µA @ 800 V | 800 V | 10A (DC) | -55°C ~ 150°C | 1.7 V @ 10 A | ||
|
|
MBR1650HDIODE SCHOTTKY 50V 16A TO220 Taiwan Semiconductor Corporation |
2,625 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 16A (DC) | -55°C ~ 150°C | 750 mV @ 16 A | |
|
|
GPA805DIODE GEN PURP 8A 600V TO220AC Taiwan Semiconductor Corporation |
2,320 | - |
RFQ |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 8A (DC) | -55°C ~ 150°C | 1.1 V @ 8 A | ||
|
SR1503DIODE SCHOTTKY 15A 30V R-6 Taiwan Semiconductor Corporation |
2,457 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 15A (DC) | -55°C ~ 150°C | 550 mV @ 15 A | ||
|
|
MBRF2060DIODE SCHOTTKY 60V 20A ITO220 Taiwan Semiconductor Corporation |
3,808 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 60 V | 60 V | 20A (DC) | -55°C ~ 150°C | 820 mV @ 20 A | ||
|
|
SF33GDIODE GEN PURP 150V 3A DO201AD Taiwan Semiconductor Corporation |
2,244 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 3A (DC) | -55°C ~ 150°C | 950 mV @ 3 A | ||
|
|
SFAF2004GDIODE GEN PURP 200V 20A ITO220AC Taiwan Semiconductor Corporation |
2,368 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 170pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 20A (DC) | -55°C ~ 150°C | 975 mV @ 20 A | ||
|
|
MBR1635HDIODE SCHOTTKY 35V 16A TO220 Taiwan Semiconductor Corporation |
2,797 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 35 V | 35 V | 16A (DC) | -55°C ~ 150°C | 630 mV @ 16 A | |
|
|
SRA2060DIODE SCHOTTKY 60V 20A TO220AC Taiwan Semiconductor Corporation |
3,836 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 20A (DC) | -55°C ~ 150°C | 700 mV @ 20 A | ||
|
|
FR153GHDIODE FAST REC 1.5A 200V DO-15 Taiwan Semiconductor Corporation |
2,243 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1.5A (DC) | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
SFAF1608GHDIODE GEN PURP 600V 16A ITO220AC Taiwan Semiconductor Corporation |
3,814 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 16A (DC) | -55°C ~ 150°C | 1.7 V @ 16 A | |
|
|
HERAF1004GDIODE GEN PURP 10A 300V IT0-220A Taiwan Semiconductor Corporation |
2,277 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 10A (DC) | -55°C ~ 150°C | 1 V @ 10 A |
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