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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
BA157GHB0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	2,479	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	15pF @ 4V, 1MHz	150 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
BA158G B0G DIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation	3,736	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	15pF @ 4V, 1MHz	150 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
BA158GHB0G DIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation	3,242	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	15pF @ 4V, 1MHz	150 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
BA159G B0G DIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation	3,004	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	15pF @ 4V, 1MHz	250 ns	5 µA @ 1000 V	-	1A	-55°C ~ 150°C	1.2 V @ 1 A
SR009H DIODE SCHOTTKY 0.5A 90V DO-41 Taiwan Semiconductor Corporation	3,293	-	RFQ		Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	65pF @ 4V, 1MHz	-	100 µA @ 90 V	90 V	500mA (DC)	-55°C ~ 150°C	850 mV @ 500 mA
BA159GHB0G DIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation	3,452	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	15pF @ 4V, 1MHz	250 ns	5 µA @ 1000 V	-	1A	-55°C ~ 150°C	1.2 V @ 1 A
MBRF10150 DIODE SCHOTTKY 150V 10A ITO220AB Taiwan Semiconductor Corporation	3,381	-	RFQ		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	10A (DC)	-55°C ~ 150°C	1.05 V @ 10 A
FR101G B0G DIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation	2,549	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	150 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
FR102G B0G DIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation	2,601	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	150 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
SF31G DIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation	3,359	-	RFQ		Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	3A (DC)	-55°C ~ 150°C	950 mV @ 3 A
FR103G B0G DIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation	2,991	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	150 ns	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
SFAF2008GH DIODE GEN PURP 600V 20A ITO220AC Taiwan Semiconductor Corporation	2,877	-	RFQ		Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	150pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	20A (DC)	-55°C ~ 150°C	1.7 V @ 20 A
FR104G B0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	3,413	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	150 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
MBRF2050H DIODE SCHOTTKY 50V 20A ITO220 Taiwan Semiconductor Corporation	2,433	-	RFQ		Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	200 µA @ 50 V	50 V	20A (DC)	-55°C ~ 150°C	820 mV @ 20 A
FR105G B0G DIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation	3,928	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	250 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
SFAF2007GH DIODE GEN PURP 500V 20A ITO220AC Taiwan Semiconductor Corporation	2,342	-	RFQ		Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	150pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	20A (DC)	-55°C ~ 150°C	1.7 V @ 20 A
FR106G B0G DIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation	3,923	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	500 ns	5 µA @ 800 V	800 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
SFAF2008G DIODE GEN PURP 600V 20A ITO220AC Taiwan Semiconductor Corporation	2,592	-	RFQ		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	150pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	20A (DC)	-55°C ~ 150°C	1.7 V @ 20 A
FR107G B0G DIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation	3,188	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	500 ns	5 µA @ 1000 V	-	1A	-55°C ~ 150°C	1.3 V @ 1 A
GPA805H DIODE GEN PURP 8A 600V TO220AC Taiwan Semiconductor Corporation	2,164	-	RFQ		Tube	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	-	5 µA @ 600 V	600 V	8A (DC)	-55°C ~ 150°C	1.1 V @ 8 A