Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
MUR310S R7

MUR310S R7

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation
2,830 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 100 V 100 V 3A -55°C ~ 175°C 875 mV @ 3 A
1N5821 B0G

1N5821 B0G

DIODE SCHOTTKY 30V 3A DO201AD

Taiwan Semiconductor Corporation
2,968 -

RFQ

1N5821 B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 200pF @ 4V, 1MHz - 500 µA @ 30 V 30 V 3A -55°C ~ 125°C 500 mV @ 3 A
HS5K R6G

HS5K R6G

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation
2,349 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 50pF @ 4V, 1MHz 75 ns 10 µA @ 800 V 800 V 5A (DC) -55°C ~ 150°C 1.7 V @ 5 A
1N5821HB0G

1N5821HB0G

DIODE SCHOTTKY 30V 3A DO201AD

Taiwan Semiconductor Corporation
2,839 -

RFQ

1N5821HB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 200pF @ 4V, 1MHz - 500 µA @ 30 V 30 V 3A -55°C ~ 125°C 500 mV @ 3 A
S4A R6G

S4A R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation
3,147 -

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 50 V 50 V 4A -55°C ~ 150°C 1.15 V @ 4 A
1N5822 B0G

1N5822 B0G

DIODE SCHOTTKY 40V 3A DO201AD

Taiwan Semiconductor Corporation
3,222 -

RFQ

1N5822 B0G

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 200pF @ 4V, 1MHz - 500 µA @ 40 V 40 V 3A -55°C ~ 125°C 525 mV @ 3 A
ES3C R6G

ES3C R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation
2,666 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 3A -55°C ~ 150°C 950 mV @ 3 A
SS33 M6

SS33 M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation
3,664 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 30 V 30 V 3A (DC) -55°C ~ 125°C 500 mV @ 3 A
1N5822HB0G

1N5822HB0G

DIODE SCHOTTKY 40V 3A DO201AD

Taiwan Semiconductor Corporation
2,322 -

RFQ

1N5822HB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 200pF @ 4V, 1MHz - 500 µA @ 40 V 40 V 3A -55°C ~ 125°C 525 mV @ 3 A
RS3J R6

RS3J R6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation
2,620 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 250 ns 10 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.3 V @ 3 A
2A01G B0G

2A01G B0G

DIODE GEN PURP 50V 2A DO204AC

Taiwan Semiconductor Corporation
2,132 -

RFQ

2A01G B0G

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 1.1 V @ 2 A
ES3D R6G

ES3D R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation
2,800 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 3A -55°C ~ 150°C 950 mV @ 3 A
2A01GHB0G

2A01GHB0G

DIODE GEN PURP 50V 2A DO204AC

Taiwan Semiconductor Corporation
3,604 -

RFQ

2A01GHB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 1.1 V @ 2 A
S4M M6

S4M M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation
3,622 -

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 1000 V 1000 V 4A -55°C ~ 150°C 1.15 V @ 4 A
2A02G B0G

2A02G B0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation
3,297 -

RFQ

2A02G B0G

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 2A -55°C ~ 150°C 1.1 V @ 2 A
S12JC R6G

S12JC R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation
3,617 -

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 78pF @ 4V, 1MHz - 1 µA @ 600 V 600 V 12A (DC) -55°C ~ 150°C 1.1 V @ 12 A
2A02GHB0G

2A02GHB0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation
2,196 -

RFQ

2A02GHB0G

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 2A -55°C ~ 150°C 1.1 V @ 2 A
MUR305S R6

MUR305S R6

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation
2,127 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 50 V 50 V 3A -55°C ~ 175°C 875 mV @ 3 A
2A03G B0G

2A03G B0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation
2,049 -

RFQ

2A03G B0G

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 2A -55°C ~ 150°C 1 V @ 2 A
HS3B R6

HS3B R6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation
3,862 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C 1 V @ 3 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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