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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S12KC R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,998 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 78pF @ 4V, 1MHz | - | 1 µA @ 800 V | 800 V | 12A (DC) | -55°C ~ 150°C | 1.1 V @ 12 A | ||
|
1N5395G B0GDIODE GEN PURP 400V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,590 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
|
ES3C M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,959 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | ||
|
|
1N5395GHB0GDIODE GEN PURP 400V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,025 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A |
|
|
SK810C R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,246 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 8A (DC) | -55°C ~ 150°C | 900 mV @ 8 A | ||
|
|
1N5397G B0GDIODE GEN PURP 600V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,154 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
|
S4D R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,033 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 200 V | 200 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | ||
|
|
1N5397GHB0GDIODE GEN PURP 600V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,701 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A |
|
|
SK53C R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,410 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A | ||
|
|
1N5398G B0GDIODE GEN PURP 800V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,944 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
|
SSL33 M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,490 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 3A (DC) | -55°C ~ 125°C | 410 mV @ 3 A | ||
|
|
1N5398GHB0GDIODE GEN PURP 800V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,619 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A |
|
|
HS5M R6GDIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,625 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | 1000 V | 5A (DC) | -55°C ~ 150°C | 1.7 V @ 5 A | ||
|
|
1N5399G B0GDIODE GEN PURP 1.5A DO204AC Taiwan Semiconductor Corporation |
2,268 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
|
HS3G R7DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
2,465 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | ||
|
|
1N5399GHB0GDIODE GEN PURP 1.5A DO204AC Taiwan Semiconductor Corporation |
3,519 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A |
|
|
S5J M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,202 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | ||
|
1N5400G B0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
2,453 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
|
HS3J M6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,658 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | ||
|
|
1N5400GHB0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
2,931 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A |
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