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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HS5D R6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,680 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 5A (DC) | -55°C ~ 150°C | 1 V @ 5 A | ||
|
1N5401G B0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
3,606 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
|
S10MC M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,993 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 10A (DC) | -55°C ~ 150°C | 1.1 V @ 10 A | ||
|
|
1N5401GHB0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
2,147 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A |
|
|
HS5M R6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,755 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | 1000 V | 5A (DC) | -55°C ~ 150°C | 1.7 V @ 5 A | ||
|
|
1N5402G B0GDIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation |
2,334 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
MUR315S R6GDIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
2,407 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 25 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 175°C | 875 mV @ 3 A | ||
|
|
1N5402GHB0GDIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation |
3,031 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A |
|
|
HS5D M6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,935 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 5A (DC) | -55°C ~ 150°C | 1 V @ 5 A | ||
|
|
1N5404G B0GDIODE GEN PURP 400V 3A DO201AD Taiwan Semiconductor Corporation |
2,580 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
SK52C R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,096 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A | ||
|
|
1N5404GHB0GDIODE GEN PURP 400V 3A DO201AD Taiwan Semiconductor Corporation |
3,739 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1 V @ 3 A |
|
|
S5B R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,408 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | ||
|
|
1N5406G B0GDIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
3,824 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
HS5F R6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
2,893 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 5A (DC) | -55°C ~ 150°C | 1 V @ 5 A | ||
|
|
1N5406GHB0GDIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
2,996 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1 V @ 3 A |
|
|
RS3M R7DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
2,300 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 500 ns | 10 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | ||
|
|
1N5407G B0GDIODE GEN PURP 800V 3A DO201AD Taiwan Semiconductor Corporation |
2,514 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
ESH3D R6GDIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
3,669 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A | ||
|
|
1N5407GHB0GDIODE GEN PURP 800V 3A DO201AD Taiwan Semiconductor Corporation |
2,801 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1 V @ 3 A |
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