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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SF42G A0GDIODE GEN PURP 100V 4A DO201AD Taiwan Semiconductor Corporation |
2,562 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 4A | -55°C ~ 150°C | 1 V @ 4 A | |
|
|
SF42GHA0GDIODE GEN PURP 100V 4A DO201AD Taiwan Semiconductor Corporation |
2,246 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 4A | -55°C ~ 150°C | 1 V @ 4 A |
|
|
SF43G A0GDIODE GEN PURP 150V 4A DO201AD Taiwan Semiconductor Corporation |
3,613 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 4A | -55°C ~ 150°C | 1 V @ 4 A | |
|
|
SF43GHA0GDIODE GEN PURP 150V 4A DO201AD Taiwan Semiconductor Corporation |
2,424 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 4A | -55°C ~ 150°C | 1 V @ 4 A |
|
|
SF44G A0GDIODE GEN PURP 200V 4A DO201AD Taiwan Semiconductor Corporation |
3,541 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 4A | -55°C ~ 150°C | 1 V @ 4 A | |
|
|
SF44GHA0GDIODE GEN PURP 200V 4A DO201AD Taiwan Semiconductor Corporation |
3,215 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 4A | -55°C ~ 150°C | 1 V @ 4 A |
|
|
SF45G A0GDIODE GEN PURP 300V 4A DO201AD Taiwan Semiconductor Corporation |
3,455 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 4A | -55°C ~ 150°C | 1.3 V @ 4 A | |
|
|
SF45GHA0GDIODE GEN PURP 300V 4A DO201AD Taiwan Semiconductor Corporation |
3,631 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 4A | -55°C ~ 150°C | 1.3 V @ 4 A |
|
|
SF46G A0GDIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation |
2,044 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 4A | -55°C ~ 150°C | 1.3 V @ 4 A | |
|
|
SF46GHA0GDIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation |
2,159 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 4A | -55°C ~ 150°C | 1.3 V @ 4 A |
|
|
SF47G A0GDIODE GEN PURP 500V 4A DO201AD Taiwan Semiconductor Corporation |
2,634 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 4A | -55°C ~ 150°C | 1.7 V @ 4 A | |
|
|
SF47GHA0GDIODE GEN PURP 500V 4A DO201AD Taiwan Semiconductor Corporation |
2,608 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 4A | -55°C ~ 150°C | 1.7 V @ 4 A |
|
ES3H M6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,536 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | ||
|
|
SF48G A0GDIODE GEN PURP 600V 4A DO201AD Taiwan Semiconductor Corporation |
3,855 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.7 V @ 4 A | |
|
|
ES3H R7GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,669 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | ||
|
|
SF48GHA0GDIODE GEN PURP 600V 4A DO201AD Taiwan Semiconductor Corporation |
3,778 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.7 V @ 4 A |
|
|
S3B R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,881 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | ||
|
|
SF61G A0GDIODE GEN PURP 50V 6A DO201AD Taiwan Semiconductor Corporation |
3,074 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 6A | -55°C ~ 150°C | 975 mV @ 6 A | |
|
|
S3B R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,724 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | ||
|
|
SF61GHA0GDIODE GEN PURP 50V 6A DO201AD Taiwan Semiconductor Corporation |
2,401 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 6A | -55°C ~ 150°C | 975 mV @ 6 A |
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