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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SF2L4GHA0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
2,431 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
|
SF2L6G A0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
2,515 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
SF2L6GHA0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
3,904 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A |
|
|
SF2L8G A0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
3,550 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
|
SF2L8GHA0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
2,320 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A |
|
SF31G A0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
2,125 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
|
|
SF31GHA0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
3,501 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A |
|
|
SF32G A0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
3,387 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
|
|
SF32GHA0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
2,853 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A |
|
|
SF33G A0GDIODE GEN PURP 150V 3A DO201AD Taiwan Semiconductor Corporation |
3,730 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
|
|
SF33GHA0GDIODE GEN PURP 150V 3A DO201AD Taiwan Semiconductor Corporation |
3,183 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A |
|
|
SF34GHA0GDIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation |
2,916 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A |
|
|
SF35G A0GDIODE GEN PURP 300V 3A DO201AD Taiwan Semiconductor Corporation |
2,746 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
|
SF35GHA0GDIODE GEN PURP 300V 3A DO201AD Taiwan Semiconductor Corporation |
3,943 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A |
|
|
SF36GHA0GDIODE GEN PURP 400V 3A DO201AD Taiwan Semiconductor Corporation |
2,198 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A |
|
|
SF37G A0GDIODE GEN PURP 500V 3A DO201AD Taiwan Semiconductor Corporation |
2,271 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
SF37GHA0GDIODE GEN PURP 500V 3A DO201AD Taiwan Semiconductor Corporation |
3,368 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A |
|
|
SF38GHA0GDIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
3,563 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A |
|
|
SF41G A0GDIODE GEN PURP 50V 4A DO201AD Taiwan Semiconductor Corporation |
3,374 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 4A | -55°C ~ 150°C | 1 V @ 4 A | |
|
|
SF41GHA0GDIODE GEN PURP 50V 4A DO201AD Taiwan Semiconductor Corporation |
2,049 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 4A | -55°C ~ 150°C | 1 V @ 4 A |
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